Ultrawide-bandgap semiconductors: An overview

Wong, Man Hoi; Bierwagen, Oliver; Kaplar, Robert J.; Umezawa, Hitoshi

doi:10.1557/s43578-021-00458-1

Title: Ultrawide-bandgap semiconductors: An overview

Journal Article · 27 December 2021 · Journal of Materials Research

DOI: https://doi.org/10.1557/s43578-021-00458-1 · OSTI ID:1883171

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Univ. of Massachusetts, Lowell, MA (United States)
Leibniz-Institut im Forschungsverbund Berlin (Germany)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Institute of Advanced Industrial Science and Technology (AIST), Osaka (Japan)

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. as such, this focus issue presents a timely selection of papers spanning the current state of the art in UWBG materials and applications, including both experimental results and theoretical developments. It covers broad research subtopics on UWBG bulk crystals and substrate technologies, UWBG defect science and doping, UWBG epitaxy, UWBG electronic and optoelectronic properties, and UWBG power devices and emitters. In this overview article, we consolidate the fundamentals and background of key UWBG semiconductors including aluminum gallium nitride alloys (Al_xGa_1–xN), boron nitride (BN), diamond, β-phase gallium oxide (β-Ga₂O₃), and a number of other UWBG binary and ternary oxides.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1883171

Report Number(s):: SAND2021-15989J; 702312

Journal Information:: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 23 Vol. 36; ISSN 0884-2914

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

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Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented substrate by step-flow mode Kim, Seong-Woo; Takaya, Ryota; Hirano, Shintaro Applied Physics Express, Vol. 14, Issue 11 https://doi.org/10.35848/1882-0786/ac28e7	journal	October 2021
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Valence band ordering in β-Ga ₂ O ₃ studied by polarized transmittance and reflectance spectroscopy Onuma, Takeyoshi; Saito, Shingo; Sasaki, Kohei Japanese Journal of Applied Physics, Vol. 54, Issue 11 https://doi.org/10.7567/JJAP.54.112601	journal	October 2015
Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices Fujita, Shizuo; Oda, Masaya; Kaneko, Kentaro Japanese Journal of Applied Physics, Vol. 55, Issue 12 https://doi.org/10.7567/JJAP.55.1202A3	journal	November 2016

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