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Title: Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links

Abstract

We discuss the design and demonstration of various III–V/Si asymmetric Mach–Zehnder interferometer (AMZI) and ring-assisted AMZI (de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded III–V/Si metal-oxide-semiconductor capacitor (MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic integration. The second- and third-order MOSCAP AMZI (de-)interleavers exhibit cross-talk (XT) levels down to − 22  dB and − 32    dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI (de-)interleavers have XT levels down to − 27  dB, − 22  dB, and − 20    dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of 1.6 – 27    μA / cm 2 . To the best of our knowledge, we have demonstrated for the first time, athermal III–V/Si MOSCAP (de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.

Authors:
ORCiD logo; ; ; ; ORCiD logo; ORCiD logo;
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1880894
Grant/Contract Number:  
AR0001039
Resource Type:
Published Article
Journal Name:
Photonics Research
Additional Journal Information:
Journal Name: Photonics Research Journal Volume: 10 Journal Issue: 2; Journal ID: ISSN 2327-9125
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English

Citation Formats

Cheung, Stanley, Kurczveil, Geza, Hu, Yingtao, Fu, Mingye, Yuan, Yuan, Liang, Di, and Beausoleil, Raymond G. Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links. United States: N. p., 2022. Web. doi:10.1364/PRJ.444991.
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Cheung, Stanley, Kurczveil, Geza, Hu, Yingtao, Fu, Mingye, Yuan, Yuan, Liang, Di, & Beausoleil, Raymond G. Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links. United States. https://doi.org/10.1364/PRJ.444991
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Cheung, Stanley, Kurczveil, Geza, Hu, Yingtao, Fu, Mingye, Yuan, Yuan, Liang, Di, and Beausoleil, Raymond G. Mon . "Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links". United States. https://doi.org/10.1364/PRJ.444991.
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@article{osti_1880894,
title = {Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links},
author = {Cheung, Stanley and Kurczveil, Geza and Hu, Yingtao and Fu, Mingye and Yuan, Yuan and Liang, Di and Beausoleil, Raymond G.},
abstractNote = {We discuss the design and demonstration of various III–V/Si asymmetric Mach–Zehnder interferometer (AMZI) and ring-assisted AMZI (de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded III–V/Si metal-oxide-semiconductor capacitor (MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic integration. The second- and third-order MOSCAP AMZI (de-)interleavers exhibit cross-talk (XT) levels down to − 22  dB and − 32    dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI (de-)interleavers have XT levels down to − 27  dB, − 22  dB, and − 20    dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of 1.6 – 27    μA / cm 2 . To the best of our knowledge, we have demonstrated for the first time, athermal III–V/Si MOSCAP (de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.},
doi = {10.1364/PRJ.444991},
journal = {Photonics Research},
number = 2,
volume = 10,
place = {United States},
year = {Mon Jan 24 00:00:00 EST 2022},
month = {Mon Jan 24 00:00:00 EST 2022}
}
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