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Title: Orientation control of high-χ triblock copolymer for sub-10 nm patterning using fluorine-containing polymeric additives

Journal Article · · Journal of Micro/Nanolithography, MEMS, and MOEMS
 [1];  [1];  [1];  [2];  [3]
  1. Univ. of Chicago, IL (United States)
  2. Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
  3. Univ. of Chicago, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

Directed self-assembly (DSA) of block copolymers (BCPs) Is one of the most promising techniques to tackle the ever-increasing demand for subllthographic features In semiconductor industries. BCPs with high Flory-Huggins parameter (chi) are of particular Interest due to their ability to self-assemble at the length scale of sub-10 nm. However, such high-chi BCPs typically have imbalanced surface energies between respective blocks, making it a challenge to achieve desired perpendicular orientation. To address this challenge, we mixed a fluorine-containing polymeric additive with poly(2-vlnylpyrldine)-block-polystyrene-block-poly(2-vlnylpyrldine) (P2VP-b-PS-b-P2VP) and successfully controlled the orientation of the high-chi triblock copolymer. The additive selectively mixes with P2VP block through hydrogen bonding and can reduce the dissimilarity of surface energies between PS and P2VP blocks. After optimizing additive dose and annealing conditions, desired perpendicular orientation formed upon simple thermal annealing. We further demonstrated DSA of this material system with five times density multiplication and a half-pitch as small as 8.5 nm. This material system Is also amenable to sequential Infiltration synthesis treatment to selectively grow metal oxide In P2VP domains, which can facilitate the subsequent pattern transfer. We believe that this integration-friendly DSA platform using simple thermal annealing holds the great potential for sub-10 nm nanopatterning applications.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; National Science Foundation (NSF)
Grant/Contract Number:
AC02-06CH11357; 1344891
OSTI ID:
1880537
Journal Information:
Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 18, Issue 03; ISSN 1932-5150
Publisher:
SPIECopyright Statement
Country of Publication:
United States
Language:
English

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