Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Fields, Shelby S.; Cai, Truong; Jaszewski, Samantha T.; Salanova, Alejandro; Mimura, Takanori; Heinrich, Helge H.; Henry, Michael David; Kelley, Kyle P.; Sheldon, Brian W.; Ihlefeld, Jon F.

doi:10.1002/aelm.202200601

Title: Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Journal Article · 02 August 2022 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.202200601 · OSTI ID:1879789

^[1]; Cai, Truong ^[2]; Jaszewski, Samantha T. ^[1]; Salanova, Alejandro ^[1]; Mimura, Takanori ^[1]; Heinrich, Helge H. ^[1]; Henry, Michael David ^[3];

^[4]; Sheldon, Brian W. ^[2]; Ihlefeld, Jon F. ^[1]

University of Virginia, Charlottesville, VA (United States)
Brown University, Providence, RI (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

The presence of the top electrode on hafnium oxide-based thin films during processing has been shown to drive an increase in the amount of metastable ferroelectric orthorhombic phase and polarization performance. This “Clamping Effect,” also referred to as the Capping or Confinement Effect, is attributed to the mechanical stress and confinement from the top electrode layer. However, other contributions to orthorhombic phase stabilization have been experimentally reported, which may also be affected by the presence of a top electrode. In this study, it is shown that the presence of the top electrode during thermal processing results in larger tensile biaxial stress magnitudes and concomitant increases in ferroelectric phase fraction and polarization response, whereas film chemistry, microstructure, and crystallization temperature are not affected. Through etching experiments and measurement of stress evolution for each processing step, it is shown that the top electrode locally inhibits out-of-plane expansion in the HZO during crystallization, which prevents equilibrium monoclinic phase formation and stabilizes the orthorhombic phase. This study provides a mechanistic understanding of the clamping effect and orthorhombic phase formation in ferroelectric hafnium oxide-based thin films, which informs the future design of these materials to maximize ferroelectric phase purity and corresponding polarization behavior.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for 3D Ferroelectric Microelectronics (3DFeM); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Pennsylvania State Univ., University Park, PA (United States); Pennsylvania State University, University Park, PA (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: National Science Foundation; USDOE; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; NA0003525; SC0021118

OSTI ID:: 1879789

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 12 Vol. 8; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
biaxial stress
clamping effect
diffraction
ferroelectrics
hafnium
zirconium oxide

Title: Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

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