Thermal Conductivity of BAs under Pressure

Hou, Songrui; Sun, Bo; Tian, Fei; Cai, Qingan; Xu, Youming; Wang, Shanmin; Chen, Xi; Ren, Zhifeng; Li, Chen; Wilson, Richard B.

doi:10.1002/aelm.202200017

Title: Thermal Conductivity of BAs under Pressure

Journal Article · 21 July 2022 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.202200017 · OSTI ID:1877427

Hou, Songrui ^[1]; Sun, Bo ^[2]; Tian, Fei ^[3]; Cai, Qingan ^[4]; Xu, Youming ^[5]; Wang, Shanmin ^[6]; Chen, Xi ^[5]; Ren, Zhifeng ^[7]; Li, Chen ^[8];

^[8]

Materials Science and Engineering University of California Riverside California 92521 USA
Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen Guangdong 518055 China
School of Materials Science and Engineering Sun Yat‐sen University Guangzhou Guangdong 510275 China, Department of Physics and Texas Center for Superconductivity University of Houston Houston Texas 77204 USA
Department of Mechanical Engineering University of California Riverside California 92521 USA
Department of Electrical and Computer Engineering University of California Riverside California 92521 USA
Department of Physics Southern University of Science and Technology Shenzhen Guangdong 518055 China
Department of Physics and Texas Center for Superconductivity University of Houston Houston Texas 77204 USA
Materials Science and Engineering University of California Riverside California 92521 USA, Department of Mechanical Engineering University of California Riverside California 92521 USA

Abstract The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three‐ and four‐phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time‐domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of BAs's thermal conductivity shows the important relationship between phonon dispersion properties and three‐ and four‐phonon scattering rates.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States); Energy Frontier Research Centers (EFRC) (United States). Ultra Materials for a Resilient, Smart Electricity Grid (ULTRA)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021230

OSTI ID:: 1877427

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 10 Vol. 8; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Thermal Conductivity of BAs under Pressure

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