Theory and practice of “Striping” for improved ON/OFF Ratio in carbon nanonet thin film transistors
- Purdue Univ., West Lafayette, IN (United States); University of Illinois
- Univ. of Illinois, Urbana, IL (United States)
- Purdue Univ., West Lafayette, IN (United States)
A new technique to reduce the influence of metallic carbon nanotubes (CNTs)—relevant for large-scale integrated circuits based on CNT-nanonet transistors—is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called “striping”; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Organization:
- National Science Foundation; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Grant/Contract Number:
- FG02-07ER46453; FG02-07ER46471
- OSTI ID:
- 1876436
- Journal Information:
- Nano Research, Journal Name: Nano Research Journal Issue: 2 Vol. 2; ISSN 1998-0124
- Publisher:
- SpringerCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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