Critical analysis of self-doping and water-soluble n-type organic semiconductors: structures and mechanisms

Cowen, Lewis M.; Gilhooly-Finn, Peter A.; Giovannitti, Alexander; LeCroy, Garrett; Demetriou, Harry; Neal, William; Dong, Yifan; Westwood, Megan; Luong, Sally; Fenwick, Oliver; Salleo, Alberto; Heutz, Sandrine; Nielsen, Christian B.; Schroeder, Bob C.

doi:10.1039/d2tc01108e

Title: Critical analysis of self-doping and water-soluble n-type organic semiconductors: structures and mechanisms

Journal Article · 24 May 2022 · Journal of Materials Chemistry C

DOI: https://doi.org/10.1039/d2tc01108e · OSTI ID:1875840

Cowen, Lewis M. ^[1]; Gilhooly-Finn, Peter A. ^[2];

^[3]; LeCroy, Garrett ^[3]; Demetriou, Harry ^[4]; Neal, William ^[5]; Dong, Yifan ^[1]; Westwood, Megan ^[1]; Luong, Sally ^[5];

^[5]; Salleo, Alberto ^[3];

^[4];

^[5];

^[1]

University College London (United Kingdom)
University College London (United Kingdom); Queen Mary University of London (United Kingdom)
Stanford University, CA (United States)
Imperial College, London (United Kingdom)
Queen Mary University of London (United Kingdom)

Self-doping organic semiconductors provide a promising route to avoid instabilities and morphological issues associated with molecular n-type dopants. Structural characterization of a naphthalenetetracarboxylic diimide (NDI) semiconductor covalently bound to an ammonium hydroxide group is presented. The dopant precursor was found to be the product of an unexpected base catalyzed hydrolysis, which was reversible. The reversible hydrolysis had profound consequences on the chemical composition, morphology, and electronic performance of the doped films. In addition, we investigated the degradation mechanism of the quaternary ammonium group and the subsequent doping of NDI. These findings reveal that the products of more than one chemical reaction during processing of films must be considered when utilizing this promising class of water-soluble semiconductors.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Engineering and Physical Sciences Research Council (EPSRC); UK Research and Innovation for Future Leaders; Royal Society University Research Fellowship

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1875840

Journal Information:: Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 23 Vol. 10; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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