Intrinsic Performance Variability in Aligned Array CNFETs

Salamat, Shuaib; Ho, Xinning; Rogers, John A.; Alam, Muhammad Ashraful

doi:10.1109/tnano.2010.2046674

Title: Intrinsic Performance Variability in Aligned Array CNFETs

Journal Article · 29 March 2010 · IEEE Transactions on Nanotechnology

DOI: https://doi.org/10.1109/tnano.2010.2046674 · OSTI ID:1875518

Salamat, Shuaib ^[1]; Ho, Xinning ^[2]; Rogers, John A. ^[2]; Alam, Muhammad Ashraful ^[3]

Purdue Univ., West Lafayette, IN (United States); University of Illinois
Univ. of Illinois at Urbana-Champaign, IL (United States)
Purdue Univ., West Lafayette, IN (United States)

Here, the I-V characteristic of carbon nanotube (CNT) transistors is dictated by the Schottky barrier (SB) at metal-nanotube interface. The SB is defined by the diameter of the CNT along with the source/drain metal and is presumed a device constant for single CNT transistors. Given the wide distribution of diameter of CVD-grown nanotubes, the presumption of single SB, however, is inappropriate for transistors with aligned array of CNTs. Indeed, array transistors with similar geometries and contact material can still exhibit considerable variation in threshold voltage (V _T), on current (I _ON), and device resistance (R _d). We use measured diameter distribution within the framework of detailed numerical simulations to demonstrate that the diameter distribution of CNTs (in CNT FETs) plays a dominant role in defining the fluctuation of array transistors. Besides, it is argued that the large-scale integration of these devices within an IC would be feasible only if the distribution of diameter is considerably narrowed.

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Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46471; FG02-07ER46453

OSTI ID:: 1875518

Journal Information:: IEEE Transactions on Nanotechnology, Journal Name: IEEE Transactions on Nanotechnology Journal Issue: 3 Vol. 10; ISSN 1536-125X

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (36)

Physics of carbon nanotubes Dresselhaus, M. S.; Dresselhaus, G.; Saito, R. Carbon, Vol. 33, Issue 7 https://doi.org/10.1016/0008-6223(95)00017-8	journal	January 1995
Electronic and structural properties of carbon nanotubes Mintmire, J. W.; White, C. T. Carbon, Vol. 33, Issue 7 https://doi.org/10.1016/0008-6223(95)00018-9	journal	January 1995
Work function of carbon nanotubes Shiraishi, Masashi; Ata, Masafumi Carbon, Vol. 39, Issue 12 https://doi.org/10.1016/S0008-6223(00)00322-5	journal	October 2001
Carbon nanotube electronics Avouris, Phaedon Chemical Physics, Vol. 281, Issue 2-3 https://doi.org/10.1016/S0301-0104(02)00376-2	journal	August 2002
Molecular Electronics with Carbon Nanotubes Avouris, Phaedon Accounts of Chemical Research, Vol. 35, Issue 12 https://doi.org/10.1021/ar010152e	journal	July 2002
Controlling Energy-Level Alignments at Carbon Nanotube/Au Contacts Cui, Xiaodong; Freitag, Marcus; Martel, Richard Nano Letters, Vol. 3, Issue 6 https://doi.org/10.1021/nl034193a	journal	June 2003
Ballistic Transport in Metallic Nanotubes with Reliable Pd Ohmic Contacts Mann, David; Javey, Ali; Kong, Jing Nano Letters, Vol. 3, Issue 11 https://doi.org/10.1021/nl034700o	journal	November 2003
High-Current Nanotube Transistors Seidel, Robert; Graham, Andrew P.; Unger, Eugen Nano Letters, Vol. 4, Issue 5, p. 831-834 https://doi.org/10.1021/nl049776e	journal	May 2004
The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors Chen, Zhihong; Appenzeller, Joerg; Knoch, Joachim Nano Letters, Vol. 5, Issue 7, p. 1497-1502 https://doi.org/10.1021/nl0508624	journal	July 2005
Carbon Nanotube Radio Rutherglen, Chris; Burke, Peter Nano Letters, Vol. 7, Issue 11 https://doi.org/10.1021/nl0714839	journal	November 2007
Electronic structure of atomically resolved carbon nanotubes Wilder, Jeroen W. G.; Venema, Liesbeth C.; Rinzler, Andrew G. Nature, Vol. 391, Issue 6662 https://doi.org/10.1038/34139	journal	January 1998
Ballistic carbon nanotube field-effect transistors Javey, Ali; Guo, Jing; Wang, Qian Nature, Vol. 424, Issue 6949, p. 654-657 https://doi.org/10.1038/nature01797	journal	August 2003
A tunable carbon nanotube electromechanical oscillator Sazonova, Vera; Yaish, Yuval; Üstünel, Hande Nature, Vol. 431, Issue 7006 https://doi.org/10.1038/nature02905	journal	September 2004
Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates Cao, Qing; Kim, Hoon-sik; Pimparkar, Ninad Nature, Vol. 454, Issue 7203, p. 495-500 https://doi.org/10.1038/nature07110	journal	July 2008
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates Javey, Ali; Kim, Hyoungsub; Brink, Markus Nature Materials, Vol. 1, Issue 4, p. 241-246 https://doi.org/10.1038/nmat769	journal	November 2002
Sorting carbon nanotubes by electronic structure using density differentiation Arnold, Michael S.; Green, Alexander A.; Hulvat, James F. Nature Nanotechnology, Vol. 1, Issue 1, p. 60-65 https://doi.org/10.1038/nnano.2006.52	journal	October 2006
Carbon-based electronics Avouris, Phaedon; Chen, Zhihong; Perebeinos, Vasili Nature Nanotechnology, Vol. 2, Issue 10 https://doi.org/10.1038/nnano.2007.300	journal	September 2007
High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes Kang, Seong Jun; Kocabas, Coskun; Ozel, Taner Nature Nanotechnology, Vol. 2, Issue 4, p. 230-236 https://doi.org/10.1038/nnano.2007.77	journal	March 2007
Carbon nanotube films for transparent and plastic electronics Gruner, G. Journal of Materials Chemistry, Vol. 16, Issue 35 https://doi.org/10.1039/b603821m	journal	January 2006
The measurement of work function of carbon nanotubes Shiraishi, Masashi The 14th international winterschool on electronic properties of novel materials - molecular nanostructures, AIP Conference Proceedings https://doi.org/10.1063/1.1342533	conference	January 2000
High-mobility carbon-nanotube thin-film transistors on a polymeric substrate Snow, E. S.; Campbell, P. M.; Ancona, M. G. Applied Physics Letters, Vol. 86, Issue 3, Article No. 033105 https://doi.org/10.1063/1.1854721	journal	January 2005
Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors Yang, M. H.; Teo, K. B. K.; Gangloff, Laurent Applied Physics Letters, Vol. 88, Issue 11 https://doi.org/10.1063/1.2186100	journal	March 2006
Physics of carbon nanotube electronic devices Anantram, M. P.; Léonard, F. Reports on Progress in Physics, Vol. 69, Issue 3 https://doi.org/10.1088/0034-4885/69/3/R01	journal	February 2006
Aligned carbon nanotubes for nanoelectronics Choi, Won Bong; Bae, Eunju; Kang, Donghun Nanotechnology, Vol. 15, Issue 10 https://doi.org/10.1088/0957-4484/15/10/003	journal	July 2004
Detailed analysis of the mean diameter and diameter distribution of single-wall carbon nanotubes from their optical response Liu, X.; Pichler, T.; Knupfer, M. Physical Review B, Vol. 66, Issue 4 https://doi.org/10.1103/PhysRevB.66.045411	journal	July 2002
Field-Modulated Carrier Transport in Carbon Nanotube Transistors Appenzeller, J.; Knoch, J.; Derycke, V. Physical Review Letters, Vol. 89, Issue 12 https://doi.org/10.1103/PhysRevLett.89.126801	journal	August 2002
Carbon nanotube electronics and optoelectronics Avouris, Ph.; Afzali, A.; Appenzeller, J. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. https://doi.org/10.1109/IEDM.2004.1419208	conference	January 2004
Carbon nanotube electronics Avouris, P.; Appenzeller, J.; Martel, R. Proceedings of the IEEE, Vol. 9, Issue 11 https://doi.org/10.1109/JPROC.2003.818338	journal	November 2003
Carbon Nanotubes for High-Performance Electronics—Progress and Prospect Appenzeller, J. Proceedings of the IEEE, Vol. 96, Issue 2 https://doi.org/10.1109/JPROC.2007.911051	journal	February 2008
Current–Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A “Bottom-Up” Perspective Pimparkar, N.; Cao, Q.; Kumar, S. IEEE Electron Device Letters, Vol. 28, Issue 2, p. 157-160 https://doi.org/10.1109/LED.2006.889219	journal	February 2007
Limits of Performance Gain of Aligned CNT Over Randomized Network: Theoretical Predictions and Experimental Validation Pimparkar, N.; Kocabas, C. IEEE Electron Device Letters, Vol. 28, Issue 7 https://doi.org/10.1109/LED.2007.898256	journal	July 2007
Novel types of the multi-degrees-of-freedom electromagnetic actuators Vandenput, A. J. A.; Lomonova, E. A.; Makarovic, J. International Symposium on Power Electronics, Electrical Drives, Automation and Motion, 2006. SPEEDAM 2006. https://doi.org/10.1109/SPEEDAM.2006.1649924	conference	January 2006
Carbon nanotube electronics Appenzeller, J.; Knoch, J.; Martel, R. IEEE Transactions on Nanotechnology, Vol. 1, Issue 4 https://doi.org/10.1109/TNANO.2002.807390	journal	December 2002
Three-dimensional electrostatic effects of carbon nanotube transistors Neophytou, N.; Guo, Jing; Lundstrom, M. S. IEEE Transactions On Nanotechnology, Vol. 5, Issue 4, p. 385-392 https://doi.org/10.1109/TNANO.2006.876912	journal	July 2006
Logic Circuits with Carbon Nanotube Transistors Bachtold, Adrian; Hadley, Peter; Nakanishi, Takeshi Science, Vol. 294, Issue 5545, p. 1317-1320 https://doi.org/10.1126/science.1065824	journal	October 2001
Physical Properties of Carbon Nanotubes Saito, R.; Dresselhaus, G.; Dresselhaus, M. . S. World Scientific https://doi.org/10.1142/9781860943799	book	July 1998

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42 ENGINEERING
aligned network transistor
carbon nanotube (CNT) FET (CNFET)
diameter distribution
thin-film transistor (TFT)

Title: Intrinsic Performance Variability in Aligned Array CNFETs

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