Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment

Kang, Seunghun; Jang, Woo-Sung; Morozovska, Anna N.; Kwon, Owoong; Jin, Yeongrok; Kim, Young-Hoon; Bae, Hagyoul; Wang, Chenxi; Yang, Sang-Hyeok; Belianinov, Alex; Randolph, Steven; Eliseev, Eugene A.; Collins, Liam; Park, Yeehyun; Jo, Sanghyun; Jung, Min-Hyoung; Go, Kyoung-June; Cho, Hae Won; Choi, Si-Young; Jang, Jae Hyuck; Kim, Sunkook; Jeong, Hu Young; Lee, Jaekwang; Ovchinnikova, Olga S.; Heo, Jinseong; Kalinin, Sergei V.; Kim, Young-Min; Kim, Yunseok

doi:10.1126/science.abk3195

Title: Highly enhanced ferroelectricity in HfO₂-based ferroelectric thin film by light ion bombardment

Journal Article · 13 May 2022 · Science

DOI: https://doi.org/10.1126/science.abk3195 · OSTI ID:1871883

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Sungkyunkwan Univ. (SKKU), Suwon (South Korea)
National Academy of Sciences of Ukraine, Kyiv (Ukraine). Institute of Physics
Pusan National University, Busan (South Korea)
Samsung Advanced Institute of Technology, Suwon (South Korea)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
National Academy of Sciences of Ukraine, Kyiv (Ukraine). Institute for Problems of Materials Science
Pohang Univ. of Science and Technology (POSTECH) (South Korea)
Korea Basic Science Institute (KBSI), Daejeon (South Korea). Center for Scientific Instrumentation
Ulsan National Institute of Science and Technology (UNIST), Ulsan (South Korea)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Univ. of Tennessee, Knoxville, TN (United States)

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO₂)–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO₂ are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. Additionally, the possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: National Research Foundation of Korea (NRF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1871883

Journal Information:: Science, Journal Name: Science Journal Issue: 6594 Vol. 376; ISSN 0036-8075

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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