A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO2 MOSFETs via Electrically Detected Magnetic Resonance

Sharov, Fedor V.; Moxim, Stephen J.; Haase, Gaddi S.; Hughart, David R.; Lenahan, Patrick M.

doi:10.1109/tns.2022.3150979

Title: A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance

Journal Article · 14 February 2022 · IEEE Transactions on Nuclear Science

DOI: https://doi.org/10.1109/tns.2022.3150979 · OSTI ID:1870441

^[1];

^[1]; Haase, Gaddi S. ^[2]; Hughart, David R. ^[2]; Lenahan, Patrick M. ^[1]

Pennsylvania State Univ., State College, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we utilize electrically detected magnetic resonance (EDMR) measurements to compare high-field stressed, and gamma irradiated Si/SiO₂ metal–oxide–silicon (MOS) structures. We utilize spin-dependent recombination (SDR) EDMR detected using the Fitzgerald and Grove dc I-V approach to compare the effects of high-field electrical stressing and gamma irradiation on defect formation at and near the Si/SiO₂ interface. As anticipated, both greatly increase the concentration of P_b centers (silicon dangling bonds at the interface) densities. The irradiation also generated a significant increase in the dc I-V EDMR response of E' centers (oxygen vacancies in the SiO₂ films), whereas the generation of an E' EDMR response in high-field stressing is much weaker than in the gamma irradiation case. These results likely suggest a difference in their physical distribution resulting from radiation damage and high electric field stressing.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1870441

Report Number(s):: SAND2022-1351J; 704386

Journal Information:: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3 Vol. 69; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
EDMR
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TDDB
electrically detected magnetic resonance
high-field stressing
radiation damage
spin-dependent recombination
time-dependent dielectric breakdown

Title: A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO2 MOSFETs via Electrically Detected Magnetic Resonance

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Title: A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance