Monte Carlo modeling of spin-polarized photoemission from p-doped bulk GaAs

Chubenko, Oksana; Karkare, Siddharth; Dimitrov, Dimitre A.; Bae, Jai Kwan; Cultrera, Luca; Bazarov, Ivan; Afanasev, Andrei

doi:10.1063/5.0060151

Title: Monte Carlo modeling of spin-polarized photoemission from p-doped bulk GaAs

Journal Article · 12 August 2021 · Journal of Applied Physics

DOI: https://doi.org/10.1063/5.0060151 · OSTI ID:1869631

^[1];

^[2];

^[3];

^[3]; Bazarov, Ivan ^[3]; Afanasev, Andrei ^[4]

Arizona State Univ., Tempe, AZ (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Cornell Univ., Ithaca, NY (United States)
George Washington Univ., Washington, DC (United States)

Here, the anticorrelation between quantum efficiency (QE) and electron spin polarization (ESP) from a ρ-doped GaAs activated to negative electron affinity is studied in detail using an ensemble Monte Carlo approach. The photoabsorption, momentum and spin relaxation during transport, and tunneling of electrons through the surface potential barrier are modeled to identify fundamental mechanisms, which limit the efficiency of GaAs spin-polarized electron sources. In particular, we study the response of QE and ESP to various parameters, such as the photoexcitation energy, doping density, and electron affinity level. Our modeling results for various transport and emission characteristics are in good agreement with available experimental data. Our findings show that the behavior of both QE and ESP at room temperature can be fully explained by the bulk relaxation mechanisms and the time that electrons spend in the material before being emitted.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: George Washington University; National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1869631

Report Number(s):: LA-UR-22-23422

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 130; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (50)

Density Matrix Theory and Applications Blum, Karl Springer Series on Atomic, Optical, and Plasma Physics https://doi.org/10.1007/978-3-642-20561-3	book	January 2012
Polarized Electrons Kessler, Joachim Springer Series on Atomic, Optical, and Plasma Physics https://doi.org/10.1007/978-3-662-02434-8	book	January 1985
Negative affinity 3–5 photocathodes: Their physics and technology Spicer, W. E. Applied Physics, Vol. 12, Issue 2 https://doi.org/10.1007/BF00896137	journal	February 1977
Dynamic screening for ionized impurity scattering in degenerate semiconductors Chung, Wei-Ye; Ferry, D. K. Solid-State Electronics, Vol. 31, Issue 9 https://doi.org/10.1016/0038-1101(88)90100-1	journal	September 1988
Effect of interparticle collisions on energy relaxation of carriers in semiconductors Brunetti, Rossella; Jacoboni, Carlo; Matulionis, Arvydas Physica B+C, Vol. 134, Issue 1-3 https://doi.org/10.1016/0378-4363(85)90373-0	journal	November 1985
Calculated electron energy distribution of negative electron affinity cathodes Vergara, G.; Herrera-Gómez, A.; Spicer, W. E. Surface Science, Vol. 436, Issue 1-3 https://doi.org/10.1016/S0039-6028(99)00612-3	journal	August 1999
Influence of the dopant concentration on the photoemission in NEA GaAs photocathodes Vergara, G.; Gómez, Lj; Capmany, J. Vacuum, Vol. 48, Issue 2 https://doi.org/10.1016/S0042-207X(96)00234-5	journal	February 1997
g Factors and Spin-Lattice Relaxation of Conduction Electrons Yafet, Y. Solid State Physics https://doi.org/10.1016/S0081-1947(08)60259-3	book	January 1963
Monte Carlo modeling of spin FETs controlled by spin–orbit interaction Shen, Min; Saikin, Semion; Cheng, Ming-C. Mathematics and Computers in Simulation, Vol. 65, Issue 4-5 https://doi.org/10.1016/j.matcom.2004.01.007	journal	May 2004
A low-voltage retarding-field Mott polarimeter for photocathode characterization McCarter, J. L.; Stutzman, M. L.; Trantham, K. W. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 618, Issue 1-3 https://doi.org/10.1016/j.nima.2010.02.123	journal	June 2010
High intensity polarized electron source Tsentalovich, E.; Bessuille, J.; Ihloff, E. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 947 https://doi.org/10.1016/j.nima.2019.162734	journal	December 2019
Velocity electric field relationship for minority electrons in highly doped p ‐GaAs Furuta, T.; Tomizawa, M. Applied Physics Letters, Vol. 56, Issue 9 https://doi.org/10.1063/1.102674	journal	February 1990
Material properties of p ‐type GaAs at large dopings Tiwari, Sandip; Wright, Steven L. Applied Physics Letters, Vol. 56, Issue 6 https://doi.org/10.1063/1.102745	journal	February 1990
The GaAs spin polarized electron source Pierce, D. T.; Celotta, R. J.; Wang, G. ‐C. Review of Scientific Instruments, Vol. 51, Issue 4 https://doi.org/10.1063/1.1136250	journal	April 1980
Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV Zollner, Stefan Journal of Applied Physics, Vol. 90, Issue 1 https://doi.org/10.1063/1.1376400	journal	July 2001
Relaxation of photoinjected spins during drift transport in GaAs Sanada, H.; Arata, I.; Ohno, Y. Applied Physics Letters, Vol. 81, Issue 15 https://doi.org/10.1063/1.1512818	journal	October 2002
Electron spin relaxation under drift in GaAs Barry, E. A.; Kiselev, A. A.; Kim, K. W. Applied Physics Letters, Vol. 82, Issue 21 https://doi.org/10.1063/1.1578180	journal	May 2003
Semiclassical Monte Carlo model for in-plane transport of spin-polarized electrons in III–V heterostructures Saikin, Semion; Shen, Min; Cheng, Ming-C. Journal of Applied Physics, Vol. 94, Issue 3 https://doi.org/10.1063/1.1589581	journal	August 2003
Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range Fisher, D. G.; Enstrom, R. E.; Escher, J. S. Journal of Applied Physics, Vol. 43, Issue 9 https://doi.org/10.1063/1.1661817	journal	September 1972
Thermal emittance and response time measurements of negative electron affinity photocathodes Bazarov, Ivan V.; Dunham, Bruce M.; Li, Yulin Journal of Applied Physics, Vol. 103, Issue 5 https://doi.org/10.1063/1.2838209	journal	March 2008
Electron sources for accelerators Hernandez-Garcia, Carlos; O’Shea, Patrick G.; Stutzman, Marcy L. Physics Today, Vol. 61, Issue 2 https://doi.org/10.1063/1.2883909	journal	February 2008
Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs Casey, H. C.; Stern, Frank Journal of Applied Physics, Vol. 47, Issue 2 https://doi.org/10.1063/1.322626	journal	February 1976
Semiconducting and other major properties of gallium arsenide Blakemore, J. S. Journal of Applied Physics, Vol. 53, Issue 10 https://doi.org/10.1063/1.331665	journal	October 1982
A Monte Carlo study for minority‐electron transport in p ‐GaAs Taniyama, Hideaki; Tomizawa, Masaaki; Furuta, Tomofumi Journal of Applied Physics, Vol. 68, Issue 2 https://doi.org/10.1063/1.346789	journal	July 1990
Spectroscopic ellipsometry and thermoreflectance of GaAs Ozaki, Shunji; Adachi, Sadao Journal of Applied Physics, Vol. 78, Issue 5 https://doi.org/10.1063/1.359966	journal	September 1995
Electron transverse energy distribution in GaAs negative electron affinity cathodes: Calculations compared to experiments Vergara, G.; Herrera‐Gómez, A.; Spicer, W. E. Journal of Applied Physics, Vol. 80, Issue 3 https://doi.org/10.1063/1.362992	journal	August 1996
Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes Karkare, Siddharth; Dimitrov, Dimitre; Schaff, William Journal of Applied Physics, Vol. 113, Issue 10 https://doi.org/10.1063/1.4794822	journal	March 2013
Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector Liu, Wei; Chen, Yiqiao; Lu, Wentao Applied Physics Letters, Vol. 109, Issue 25 https://doi.org/10.1063/1.4972180	journal	December 2016
A comprehensive evaluation of factors that influence the spin polarization of electrons emitted from bulk GaAs photocathodes Liu, Wei; Poelker, Matt; Peng, Xincun Journal of Applied Physics, Vol. 122, Issue 3 https://doi.org/10.1063/1.4994306	journal	July 2017
A photoemission moments model using density functional and transfer matrix methods applied to coating layers on surfaces: Theory Jensen, Kevin L.; Finkenstadt, Daniel; Shabaev, Andrew Journal of Applied Physics, Vol. 123, Issue 4 https://doi.org/10.1063/1.5008600	journal	January 2018
Monte Carlo modeling of thin GaAs photocathodes Liu, Wei; Wang, Erdong Journal of Applied Physics, Vol. 126, Issue 7 https://doi.org/10.1063/1.5113804	journal	August 2019
Empirical approximations for the Fermi energy in a semiconductor with parabolic bands Nilsson, N. G. Applied Physics Letters, Vol. 33, Issue 7 https://doi.org/10.1063/1.90452	journal	October 1978
Depolarization of photoelectrons emitted from optically pumped GaAs Erbudak, M.; Reihl, B. Applied Physics Letters, Vol. 33, Issue 7 https://doi.org/10.1063/1.90468	journal	October 1978
Analytic model of electron transport through and over non-linear barriers Jensen, Kevin L.; Shabaev, Andrew; Lambrakos, Sam G. Journal of Applied Physics, Vol. 127, Issue 23 https://doi.org/10.1063/5.0009759	journal	June 2020
Quantum Processes in Semiconductors Ridley, Brian K. Oxford University Press https://doi.org/10.1093/acprof:oso/9780199677214.001.0001	book	January 2013
Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony Compounds Spicer, W. E. Physical Review, Vol. 112, Issue 1 https://doi.org/10.1103/PhysRev.112.114	journal	October 1958
Transport Properties of GaAs Ruch, J. G.; Kino, G. S. Physical Review, Vol. 174, Issue 3 https://doi.org/10.1103/PhysRev.174.921	journal	October 1968
Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors Elliott, R. J. Physical Review, Vol. 96, Issue 2 https://doi.org/10.1103/PhysRev.96.266	journal	October 1954
Spin relaxation of photoelectrons in p -type gallium arsenide Fishman, Guy; Lampel, Georges Physical Review B, Vol. 16, Issue 2 https://doi.org/10.1103/PhysRevB.16.820	journal	July 1977
Monte Carlo investigation of the electron-hole-interaction effects on the ultrafast relaxation of hot photoexcited carriers in GaAs Osman, M. A.; Ferry, D. K. Physical Review B, Vol. 36, Issue 11 https://doi.org/10.1103/PhysRevB.36.6018	journal	October 1987
Spin-lattice relaxation in p -type gallium arsenide single crystals Zerrouati, K.; Fabre, F.; Bacquet, G. Physical Review B, Vol. 37, Issue 3 https://doi.org/10.1103/PhysRevB.37.1334	journal	January 1988
Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation Lugli, P.; Bordone, P.; Reggiani, L. Physical Review B, Vol. 39, Issue 11 https://doi.org/10.1103/PhysRevB.39.7852	journal	April 1989
Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors Joshi, R. P.; Grondin, R. O.; Ferry, D. K. Physical Review B, Vol. 42, Issue 9 https://doi.org/10.1103/PhysRevB.42.5685	journal	September 1990
Self-Consistent Results for n -Type Si Inversion Layers Stern, Frank Physical Review B, Vol. 5, Issue 12 https://doi.org/10.1103/PhysRevB.5.4891	journal	June 1972
Spin relaxation of conduction electrons in bulk III-V semiconductors Song, Pil Hun; Kim, K. W. Physical Review B, Vol. 66, Issue 3 https://doi.org/10.1103/PhysRevB.66.035207	journal	July 2002
Spin relaxation in cubic III-V semiconductors via interaction with polar optical phonons Dyson, A.; Ridley, B. K. Physical Review B, Vol. 69, Issue 12 https://doi.org/10.1103/PhysRevB.69.125211	journal	March 2004
Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach Jiang, J. H.; Wu, M. W. Physical Review B, Vol. 79, Issue 12 https://doi.org/10.1103/PhysRevB.79.125206	journal	March 2009
Ultrabright and Ultrafast III–V Semiconductor Photocathodes Karkare, Siddharth; Boulet, Laurent; Cultrera, Luca Physical Review Letters, Vol. 112, Issue 9 https://doi.org/10.1103/PhysRevLett.112.097601	journal	March 2014
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials Jacoboni, Carlo; Reggiani, Lino Reviews of Modern Physics, Vol. 55, Issue 3 https://doi.org/10.1103/RevModPhys.55.645	journal	July 1983
Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors Lugli, P.; Ferry, D. K. IEEE Transactions on Electron Devices, Vol. 32, Issue 11 https://doi.org/10.1109/T-ED.1985.22291	journal	November 1985

Similar Records

Recent progress on cathode development from Nagoya and KEK

Journal Article · 1995 · AIP Conference Proceedings · OSTI ID:254151

Nakanishi, T; Aoyagi, H; Nakamura, S; +15 more

Monte Carlo modeling of thin GaAs photocathodes

Journal Article · 2019 · Journal of Applied Physics · OSTI ID:1560005

Liu, Wei; Wang, Erdong

Quantum efficiency enhancement in simulated nanostructured negative electron affinity GaAs photocathodes

Journal Article · 2023 · Journal of Applied Physics · OSTI ID:1923292

Rahman, Md Ar; Zhang, Shukui; Elsayed-Ali, Hani E.

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS

Title: Monte Carlo modeling of spin-polarized photoemission from p-doped bulk GaAs

Citation Formats

References (50)

Similar Records

Related Subjects