The Role of Oxygen Transfer in Oxide Heterostructures on Functional Properties
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- State Univ. of New York at Buffalo, NY (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); New Mexico State Univ., Las Cruces, NM (United States)
- State Univ. of New York at Buffalo, NY (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
A variety of mechanisms are reported to play critical roles in contributing to the high carrier/electron mobility in oxide/SrTiO3 (STO) heterostructures. By using La0.95Sr0.05TiO3 (LSTO) epitaxially grown on different single crystal substrates (such as STO, GdScO3, LaAlO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and CeO2 buffered STO) as the model systems, the formation of a conducting substrate surface layer (CSSL) on STO substrate is shown at relatively low growth temperature and high oxygen pressure (725 °C, 5 × 10–4 Torr), which contributes to the enhanced conductivity of the LSTO/STO heterostructures. Different from the conventional oxygen vacancy model, this work reveals that the formation of the CSSL occurs when growing an oxide layer (LSTO in this case) on STO, while neither annealing nor the growth of an Au layer alone at the exact same growth condition generates the CSSL in STO. It demonstrates that the oxide layer actively pulls oxygen from STO substrate at given growth conditions, leading to the formation of the CSSL. Here, the observations emphasize the oxygen transfer across film/substrate interface during the synthesis of oxide heterostructures playing a critical role in functional properties.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Science Foundation (NSF); USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- 89233218CNA000001
- OSTI ID:
- 1869616
- Report Number(s):
- LA-UR-21-30173
- Journal Information:
- Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 11 Vol. 9; ISSN 2196-7350
- Publisher:
- Wiley-VCHCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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