Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples

Peng, Hongyu; Liu, Yafei; Chen, Zeyu; Cheng, Qianyu; Hu, Shanshan; Raghothamachar, Balaji; Dudley, Michael; Sampayan, Kristin; Sampayan, Stephen

doi:10.1016/j.jcrysgro.2021.126459

Title: Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples

Journal Article · 31 January 2022 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2021.126459 · OSTI ID:1868670

Peng, Hongyu; Liu, Yafei; Chen, Zeyu; Cheng, Qianyu; Hu, Shanshan; Raghothamachar, Balaji; Dudley, Michael; Sampayan, Kristin; Sampayan, Stephen

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000907

OSTI ID:: 1868670

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 579; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

References (14)

Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties Sampayan, S. E.; Grivickas, P. V.; Conway, A. M. Scientific Reports, Vol. 11, Issue 1 https://doi.org/10.1038/s41598-021-85275-6	journal	March 2021
4H–SiC photoconductive switching devices for use in high-power applications Doǧan, S.; Teke, A.; Huang, D. Applied Physics Letters, Vol. 82, Issue 18 https://doi.org/10.1063/1.1571667	journal	May 2003
Photoconductive and photovoltaic response of high‐dark‐resistivity 6H‐SiC devices Cho, Pak S.; Goldhar, Julius; Lee, Chi H. Journal of Applied Physics, Vol. 77, Issue 4 https://doi.org/10.1063/1.358912	journal	February 1995
80‐MW photoconductor power switch Nunnally, W. C.; Hammond, R. B. Applied Physics Letters, Vol. 44, Issue 10 https://doi.org/10.1063/1.94619	journal	May 1984
The displacement and stress fields of a general dislocation close to a free surface of an isotropic solid Shaibani, S. J.; Hazzledine, P. M. Philosophical Magazine A, Vol. 44, Issue 3 https://doi.org/10.1080/01418618108236168	journal	September 1981
A dislocation at a free surface Yoffe, Elizabeth H. Philosophical Magazine, Vol. 6, Issue 69 https://doi.org/10.1080/14786436108239675	journal	September 1961
Surface-relaxation contributions to axial screw dislocation contrast in synchrotron white-beam X-ray topographs of SiC Vetter, W. M.; Dudley, M. Journal of Applied Crystallography, Vol. 35, Issue 6 https://doi.org/10.1107/S0021889802016175	journal	November 2002
On the widths of dislocation images in X-ray topography under low-absorption conditions Miltat, J. E. A.; Bowen, D. K. Journal of Applied Crystallography, Vol. 8, Issue 6 https://doi.org/10.1107/S0021889875011569	journal	December 1975
Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image Huang, X. R.; Dudley, M.; Vetter, W. M. Journal of Applied Crystallography, Vol. 32, Issue 3 https://doi.org/10.1107/S0021889899002939	journal	June 1999
Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g · b = 0 and g · b × l = 0 Peng, Hongyu; Ailihumaer, Tuerxun; Fujie, Fumihiro Journal of Applied Crystallography, Vol. 54, Issue 2 https://doi.org/10.1107/S160057672100025X	journal	February 2021
Dislocation contrast on X-ray topographs under weak diffraction conditions Peng, Hongyu; Ailihumaer, Tuerxun; Liu, Yafei Journal of Applied Crystallography, Vol. 54, Issue 4 https://doi.org/10.1107/S1600576721006592	journal	July 2021
Performance limiting micropipe defects in silicon carbide wafers Neudeck, P. G.; Powell, J. A. IEEE Electron Device Letters, Vol. 15, Issue 2 https://doi.org/10.1109/55.285372	journal	February 1994
Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes Lendenmann, H.; Dahlquist, Fanny; Johansson, N. Materials Science Forum, Vol. 353-356 https://doi.org/10.4028/www.scientific.net/MSF.353-356.727	journal	January 2001
High Voltage Wide Bandgap Photoconductive Switching Sampayan, S. E.; Bora, Mihail; Brooksby, Craig Materials Science Forum, Vol. 821-823 https://doi.org/10.4028/www.scientific.net/MSF.821-823.871	journal	June 2015

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