Controlling superconductivity of CeIrIn5 microstructures by substrate selection
- Ecole Polytechnique Federale Lausanne (Switzerland); Radboud Univ., Nijmegen (Netherlands)
- Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Univ. of St. Andrews, Scotland (United Kingdom)
- Ecole Polytechnique Federale Lausanne (Switzerland)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Superconductor/metal interfaces are usually fabricated in heterostructures that join these dissimilar materials. A conceptually different approach has recently exploited the strain sensitivity of heavy-fermion superconductors, selectively transforming regions of the crystal into the metallic state by strain gradients. The strain is generated by differential thermal contraction between the sample and the substrate. Here, we present an improved finite-element model that reliably predicts the superconducting transition temperature in CeIrIn5 even in complex structures. Different substrates are employed to tailor the strain field into the desired shapes. Using this approach, both highly complex and strained as well as strain-free microstructures are fabricated to validate the model. This enables a high degree of control over the microscopic strain fields and forms the basis for more advanced structuring of superconductors as in Josephson junctions yet also finds natural use cases in any material class in which a modulation of the physical properties on a chip is desirable.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- Swiss National Science Foundation (SNSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Grant/Contract Number:
- 89233218CNA000001
- OSTI ID:
- 1868255
- Report Number(s):
- LA-UR-21-32120
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 120; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-quality tunnel-junction devices using high-T(c) superconductors
Superconductor GdBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} edge junctions with lattice-matched Y{sub 0.6}Pr{sub 0.4}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} barriers