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Title: Persistent Room-Temperature Photodarkening in Cu-Doped β - Ga 2 O 3

Journal Article · · Physical Review Letters

β–Ga2O3 is an ultrawide band gap semiconductor with emerging applications in power electronics. Here, the introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped β–Ga2O3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu2+ to Cu3+, a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O–H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (Hi) or substitutional (HO) defects. When CuGa–HO complexes absorb light, hydrogen is released, contributing to the observed Cu3+ species and O–H modes.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Washington State Univ., Pullman, WA (United States)
Sponsoring Organization:
Air Force Office of Scientific Research; LLNL Laboratory Directed Research and Development; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC52-07NA27344; FG02-07ER46386
OSTI ID:
1867090
Report Number(s):
LLNL-JRNL-834156; 1052559
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 7 Vol. 128; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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