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Title: Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime

Journal Article · · Physical Review. B

Domain walls, topological defects that define the frontier between regions of different stacking order in multilayer graphene, have proved to host exciting physics. The ability to tune these topological defects in situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate, through a MEMS (microelectromechanical system) actuator and magnetoresistance measurements, the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers the topological defects, manifested as addtional quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Furthermore, our findings are supported by theoretical calculations and constitute indication of the in situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way for the use of reversible topological defects in electronic applications.

Research Organization:
California State Univ. (CalState), Long Beach, CA (United States); California State Univ. (CalState), Long Beach, CA (United States). Long Beach Research Foundation
Sponsoring Organization:
National Science Foundation; National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Contributing Organization:
University of California Riverside; University of Nebraska Lincoln
Grant/Contract Number:
SC0018154
OSTI ID:
1866266
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 8 Vol. 105; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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