Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions

Alzahrani, Ali; Alruqi, Adel; Karki, Bhupendra; Kalutara Koralalage, Milinda; Jasinski, Jacek; Sumanasekera, Gamini

doi:10.1088/2632-959x/ac2e9e

Title: Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions

Journal Article · 22 December 2021 · Nano Express

DOI: https://doi.org/10.1088/2632-959x/ac2e9e · OSTI ID:1864921

^[1];

^[2];

^[3];

^[3]; Sumanasekera, Gamini ^[3]

Univ. of Louisville, KY (United States); UmmAl-Qura University, Makkah (Saudi Arabia); University of Louisville
King Abdulaziz Univ., Jeddah (Saudi Arabia)
Univ. of Louisville, KY (United States)

We have used a lithography free technique for the direct fabrication of vertically stacked two-dimensional (2D) material-based tunnel junctions and characterized by Raman, AFM, XPS. We fabricated Graphene/h-BN/Graphene devices by direct deposition of graphene (bottom layer), h-BN (insulating barrier) and graphene (top layer) sequentially using a plasma enhanced chemical vapor deposition on Si/SiO₂ substrates. The thickness of the h-BN insulating layer was varied by tuning the plasma power and the deposition time. Samples were characterized by Raman, AFM, and XPS. The I-V data follows the barrier thickness dependent quantum tunneling behavior for equally doped graphene layers. The resonant tunneling behavior was observed at room temperature for oppositely doped graphene layers where hydrazine and ammonia were used for n-doping of one of the graphene layers. The resonance with negative differential conductance occurs when the band structures of the two electrodes are aligned. The doping effect of the resonant peak is observed for varying doping levels. The results are explained according to the Bardeen tunneling model.

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Research Organization:: Univ. of Louisville, KY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0019348

OSTI ID:: 1864921

Journal Information:: Nano Express, Journal Name: Nano Express Journal Issue: 4 Vol. 2; ISSN 2632-959X

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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77 NANOSCIENCE AND NANOTECHNOLOGY
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Title: Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions

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