Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe2
Abstract
Defects significantly impact the properties of 2D semiconductors, providing in-gap quantum states that can serve as a natural platform for single-electron operations, localization sites for excitons to serve as single-photon sources, and potentially quantum spin memories. To date, however, a microscopic observation of such a single-electron transport (SET) behavior has been rarely reported on single defects of 2D semiconductors. In this study, we report a SET and charge-state transition on individual point-defect states buried in the bilayer WSe2 using scanning tunneling microscopy. SET characteristics of their states is evidenced by both the Coulomb staircase and the saturation behavior of the transport current, consistent with the SET model. Furthermore, we demonstrate that, through the local field of a scanning tunneling microscope tip, it is possible to successively charge the defects by single electrons, suggested by both the ring structures and charging peaks in dI/dV measurements. Our results provide new insights into the quantum nature of these defect-bound states, as well as the possibility of using their single-electron behavior and response for applications in quantum information and local-field sensing.
- Authors:
-
[1];
[2];
[3];
[3]
- Argonne National Lab. (ANL), Argonne, IL (United States); Anhui University (China)
- Univ. of Washington, Seattle, WA (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); Anhui University
- OSTI Identifier:
- 1864305
- Grant/Contract Number:
- AC02-06CH11357; FG02-09ER16109; SC0018171; 11874067
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry. C
- Additional Journal Information:
- Journal Volume: 125; Journal Issue: 25; Journal ID: ISSN 1932-7447
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 2D semiconductor; SET; STM; charging
Citation Formats
Zhang, Rui, Clark, Genevieve, Xu, Xiaodong, Darancet, Pierre T., and Guest, Jeffrey R. Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe2. United States: N. p., 2021.
Web. doi:10.1021/acs.jpcc.1c02791.
Zhang, Rui, Clark, Genevieve, Xu, Xiaodong, Darancet, Pierre T., & Guest, Jeffrey R. Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe2. United States. https://doi.org/10.1021/acs.jpcc.1c02791
Zhang, Rui, Clark, Genevieve, Xu, Xiaodong, Darancet, Pierre T., and Guest, Jeffrey R. Thu .
"Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe2". United States. https://doi.org/10.1021/acs.jpcc.1c02791. https://www.osti.gov/servlets/purl/1864305.
@article{osti_1864305,
title = {Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe2},
author = {Zhang, Rui and Clark, Genevieve and Xu, Xiaodong and Darancet, Pierre T. and Guest, Jeffrey R.},
abstractNote = {Defects significantly impact the properties of 2D semiconductors, providing in-gap quantum states that can serve as a natural platform for single-electron operations, localization sites for excitons to serve as single-photon sources, and potentially quantum spin memories. To date, however, a microscopic observation of such a single-electron transport (SET) behavior has been rarely reported on single defects of 2D semiconductors. In this study, we report a SET and charge-state transition on individual point-defect states buried in the bilayer WSe2 using scanning tunneling microscopy. SET characteristics of their states is evidenced by both the Coulomb staircase and the saturation behavior of the transport current, consistent with the SET model. Furthermore, we demonstrate that, through the local field of a scanning tunneling microscope tip, it is possible to successively charge the defects by single electrons, suggested by both the ring structures and charging peaks in dI/dV measurements. Our results provide new insights into the quantum nature of these defect-bound states, as well as the possibility of using their single-electron behavior and response for applications in quantum information and local-field sensing.},
doi = {10.1021/acs.jpcc.1c02791},
journal = {Journal of Physical Chemistry. C},
number = 25,
volume = 125,
place = {United States},
year = {Thu Jun 17 00:00:00 EDT 2021},
month = {Thu Jun 17 00:00:00 EDT 2021}
}
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