Mechanistic Advantages of Organotin Molecular EUV Photoresists

Ma, Jonathan H.; Needham, Craig; Wang, Han; Neureuther, Andrew; Prendergast, David; Naulleau, Patrick

doi:10.1021/acsami.1c12411

Title: Mechanistic Advantages of Organotin Molecular EUV Photoresists

Journal Article · 24 January 2022 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.1c12411 · OSTI ID:1862928

^[1]; Needham, Craig ^[2];

^[3]; Neureuther, Andrew ^[1];

^[3]; Naulleau, Patrick ^[3]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Inpria Corporation, Corvallis, OR (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Here, extreme ultraviolet (EUV)-induced radiation exposure chemistry in organotin-oxo systems, represented by the archetypal [(R-Sn)₁₂O₁₄(OH)₆](A)₂ cage, has been investigated with density functional theory. Upholding existing experimental evidence of Sn-C cleavage-dominant chemistry, computations have revealed that either electron attachment or ionization can single-handedly trigger tin-carbon bond cleavage, partially explaining the current EUV sensitivity advantage of metal oxide systems. We have revealed that tin atoms at different parts of the molecule react differently to ionization and electron attachment and have identified such selectivity as a result of local coordination chemistry instead of the macro geometry of the molecule. An ionization-deprotonation pathway has also been identified to explain the observed evolution of an anion conjugate acid upon exposure and anion mass dependence in resist sensitivity.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); C-DEN; Inpria Inc; CINEMA

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1862928

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 4 Vol. 14; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
DFT
EUV
lithography
organotin compounds
photoresist
radiation chemistry

Title: Mechanistic Advantages of Organotin Molecular EUV Photoresists

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