Vapor transport growth of MnBi2Te4 and related compounds

Yan, J. -Q.; Huang, Zengle; Wu, Weida; May, A. F.

doi:10.1016/j.jallcom.2022.164327

Title: Vapor transport growth of MnBi₂Te₄ and related compounds

Journal Article · 24 February 2022 · Journal of Alloys and Compounds

DOI: https://doi.org/10.1016/j.jallcom.2022.164327 · OSTI ID:1862143

^[1]; Huang, Zengle ^[2]; Wu, Weida ^[2];

^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Rutgers Univ., Piscataway, NJ (United States)

Motivated by fine tuning of the magnetic and topological properties of MnBi₂Te₄ via defect engineering, in this work, we report the crystal growth of MnBi₂Te₄ and related compounds using vapor transport method and crystal characterization by measuring elemental ratio, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi₂Te₄ single crystals, I₂, MnI₂, MnCl₂, TeCl₄, and MoCl₅ are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. We further successfully grow MnSb₂Te₄, MnBi_2-xSb_xTe₄, and Sb-doped MnBi₄Te₇ crystals. A small temperature gradient< 20°C between the hot and cold ends of the growth ampoule is critical for the successful crystal growth of MnBi₂Te₄ and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tune the magnetic and topological properties of these intrinsic magnetic topological insulators where controlling defects is vital.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Army Research Office (ARO)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1862143

Journal Information:: Journal of Alloys and Compounds, Journal Name: Journal of Alloys and Compounds Journal Issue: N/A Vol. 906; ISSN 0925-8388

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
MnBi2Te4
defect engineering
intrinsic magnetic topological insulator
vapor transport growth

Title: Vapor transport growth of MnBi2Te4 and related compounds

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References (24)

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Title: Vapor transport growth of MnBi₂Te₄ and related compounds