Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler Pt1-xAuxLuSb

Chatterjee, Shouvik; de Lima, Felipe Crasto; Logan, John A.; Fang, Yuan; Inbar, Hadass; Goswami, Aranya; Dempsey, Connor; Dong, Jason; Khalid, Shoaib; Brown-Heft, Tobias; Chang, Yu-Hao; Guo, Taozhi; Pennachio, Daniel J.; Wilson, Nathaniel; Chikara, Shalinee; Suslov, Alexey; Fedorov, Alexei V.; Read, Dan; Cano, Jennifer; Janotti, Anderson; Palmstrøm, Christopher J.

doi:10.1103/physrevmaterials.5.124207

Title: Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler Pt 1 - x Au x LuSb

Journal Article · 26 December 2021 · Physical Review Materials

DOI: https://doi.org/10.1103/physrevmaterials.5.124207 · OSTI ID:1860342

^[1];

^[2];

^[3]; Fang, Yuan ^[4]; Inbar, Hadass ^[3]; Goswami, Aranya ^[3]; Dempsey, Connor ^[3]; Dong, Jason ^[3];

^[5]; Brown-Heft, Tobias ^[3]; Chang, Yu-Hao ^[3]; Guo, Taozhi ^[3];

^[3]; Wilson, Nathaniel ^[3]; Chikara, Shalinee ^[6];

^[6];

^[7];

^[8];

^[9]; Janotti, Anderson ^[5] more »

Univ. of California, Santa Barbara, CA (United States); Tata Institute of Fundamental Research, Mumbai (India)
Univ. of Delaware, Newark, DE (United States); National Center for Research in Energy and Materials, Campinas (Brazil)
Univ. of California, Santa Barbara, CA (United States)
Stony Brook Univ., NY (United States)
Univ. of Delaware, Newark, DE (United States)
National High Magnetic Field Laboratory, Tallahassee, FL (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Santa Barbara, CA (United States); Cardiff Univ., Wales (United Kingdom)
Stony Brook Univ., NY (United States); Flatiron Institute, New York, NY (United States)

We report that topological materials often exhibit remarkably linear nonsaturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically nontrivial states in the emergence of such a behavior has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers, we controllably tune the LMR behavior in Pt_1-xAu_xLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise gives rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semimetallic bulk band structure, as is the case in multifunctional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: National Defense Science and Engineering Graduate Fellowship; National Science Foundation (NSF); Office of Naval Research (ONR); USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231; SC0014388

OSTI ID:: 1860342

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 12 Vol. 5; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler Pt 1 - x Au x LuSb

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