Large-Scale Layer-by-Layer Synthesis of Borophene on Ru(0001)

Sutter, Peter; Sutter, Eli

doi:10.1021/acs.chemmater.1c03061

Title: Large-Scale Layer-by-Layer Synthesis of Borophene on Ru(0001)

Journal Article · 05 November 2021 · Chemistry of Materials

DOI: https://doi.org/10.1021/acs.chemmater.1c03061 · OSTI ID:1857037

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Univ. of Nebraska, Lincoln, NE (United States)

Borophene, a two-dimensional (2D) layer of elemental boron, has attracted attention as a metallic 2D material with rich polymorphism, as well as potentially interesting electronic, optical, chemical, and catalytic properties. While controllable adjustments of the thickness beyond a single layer promise a further tunability of the properties, the growth of borophene on metal substrates has largely remained limited to monolayers. Recently, bilayer borophene has been realized on Ag(111), albeit so far limited to domains a few tens of nanometers in size. The broader exploration of the properties of borophene calls for the development of synthesis methods that produce borophene with controlled thickness beyond a single layer. Here, we report layer-by-layer borophene growth on Ru(0001) substrates up to a coverage of two atomic layers using surface segregation of interstitial boron during cooling from high temperatures. Real-time surface microscopy follows borophene nucleation and growth, establishes the growth mode of the first and second layers, and demonstrates coverage across large surface areas. Diffraction shows highly crystalline borophene layers that grow in a high-order superstructure on the Ru(0001) surface lattice. Furthermore, our results add to the capabilities of synthesizing borophene and point out avenues for growing high-quality few-layer borophene on metal substrates.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0016343

OSTI ID:: 1857037

Alternate ID(s):: OSTI ID: 1891440

Journal Information:: Chemistry of Materials, Vol. 33, Issue 22; ISSN 0897-4756

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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