Title: SENSEI: Characterization of Single-Electron Events Using a Skipper Charge-Coupled Device

Journal Article · · Physical Review Applied

We use a science-grade skipper charge-coupled device (skipper CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate, and quantify three independent contributions to the single-electron events, which were previously bundled together and classified as "dark counts": dark current, amplifier light, and spurious charge. We measure a dark current, which depends on exposure, of (5.89±0.77)×10-4e-/pix/day, and an unprecedentedly low spurious charge contribution of (1.52±0.07)×10-4e-/pix, which is exposure independent. In addition, we provide a technique to study events produced by light emitted from the amplifier, which allows the detector's operation to be optimized to minimize this effect to a level below the dark-current contribution. Our accurate characterization of the single-electron events allows one to greatly extend the sensitivity of experiments searching for dark matter or coherent neutrino scattering. Moreover, an accurate understanding of the origin of single-electron events is critical to further progress in ongoing research and development efforts of skipper and conventional CCDs.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Contributing Organization:
SENSEI Collaboration
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1855360
Journal Information:
Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 1 Vol. 17; ISSN 2331-7019
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

References (20)

DAMIC-M experiment: Thick, silicon CCDs to search for light dark matter journal April 2020
Direct search for low mass dark matter particles with CCDs journal May 2012
Picosecond hot electron light emission from submicron complementary metal–oxide–semiconductor circuits journal February 1997
Hot-Electron Emission From Shallow p − n Junctions is Silicon journal May 1963
Hot-carrier luminescence in Si journal March 1992
Exploring low-energy neutrino physics with the Coherent Neutrino Nucleus Interaction Experiment journal November 2019
Direct detection of sub-GeV dark matter journal April 2012
Coherent effects of a weak neutral current journal March 1974
Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD journal September 2017
SENSEI: First Direct-Detection Constraints on Sub-GeV Dark Matter from a Surface Run journal August 2018
SENSEI: Direct-Detection Constraints on Sub-GeV Dark Matter from a Shallow Underground Run Using a Prototype Skipper CCD journal April 2019
Constraints on Light Dark Matter Particles Interacting with Electrons from DAMIC at SNOLAB journal October 2019
SENSEI: Direct-Detection Results on sub-GeV Dark Matter from a New Skipper CCD journal October 2020
Nobel Lecture: The invention and early history of the CCD journal August 2010
Dynamic suppression of interface-state dark current in buried-channel CCDs journal January 1991
Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs journal June 1991
A study of photon emission from n-channel MOSFET's journal July 1987
Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon journal January 2003
Device Design for a 12.3-Megapixel, Fully Depleted, Back-Illuminated, High-Voltage Compatible Charge-Coupled Device journal November 2009
Scientific Charge-Coupled Devices journal August 1987