Optically Induced Picosecond Lattice Compression in the Dielectric Component of a Strongly Coupled Ferroelectric/Dielectric Superlattice
- Univ. of Wisconsin, Madison, WI (United States)
- Aix-Marseille Univ., Marseille (France)
- Gwangju Inst. of Science and Technology (Korea, Republic of)
- Pohang Accelerator Lab. (PAL) (Korea, Republic of)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Above-bandgap femtosecond optical excitation of a ferroelectric/dielectric BaTiO3/CaTiO3 superlattice leads to structural responses that are a consequence of the screening of the strong electrostatic coupling between the component layers. Time-resolved X-ray free-electron laser diffraction shows that the structural response to optical excitation includes a net lattice expansion of the superlattice consistent with depolarization-field screening driven by the photoexcited charge carriers. The depolarization-field-screening-driven expansion is separate from a photoacoustic pulse launched from the bottom electrode on which the superlattice is epitaxially grown. The distribution of diffracted intensity of superlattice X-ray reflections indicates that the depolarization-field-screening-induced strain includes a photoinduced expansion in the ferroelectric BaTiO3 and a contraction in CaTiO3. The magnitude of expansion in BaTiO3 layers is larger than the contraction in CaTiO3. The difference in the magnitude of depolarization-field-screening-driven strain in the BaTiO3 and CaTiO3 components can arise from the contribution of the oxygen octahedral rotation patterns at the BaTiO3/CaTiO3 interfaces to the polarization of CaTiO3. The depolarization-field-screening-driven polarization reduction in the CaTiO3 layers points to a new direction for the manipulation of polarization in the component layers of a strongly coupled ferroelectric/dielectric superlattice.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- National Research Foundation of Korea; National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC05-00OR22725; FG02-04ER46147
- OSTI ID:
- 1854452
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 6 Vol. 8; ISSN 2199-160X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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