Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Wang, Meng; Hao, Lin; Yin, Fang; Yang, Xin; Shen, Shengchun; Zou, Nianlong; Cao, Hui; Yang, Junyi; Lu, Nianpeng; Wu, Yongshun; Zhang, Jianbing; Zhou, Hua; Li, Jia; Liu, Jian; Yu, Pu

doi:10.1002/adfm.202100261

Title: Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Abstract

Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interest especially for their electron-doped states. However, previous experiments have been largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here, an ionic-liquid-gating-induced protonation method is utilized to achieve electron-doping into a 5d Mott-insulator built with a SrIrO₃/SrTiO₃ superlattice (SL), and a systematic mapping of its electron-doped phase diagram is achieved with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolves into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed SL structure can be readily extended into other systems with more exotic states to explore.

Authors:

Wang, Meng ^[1]; Hao, Lin ^[2]; Yin, Fang ^[3]; Yang, Xin ^[3]; Shen, Shengchun ^[1]; Zou, Nianlong ^[4]; Cao, Hui ^[5]; Yang, Junyi ^[2]; Lu, Nianpeng ^[6]; Wu, Yongshun ^[1]; Zhang, Jianbing ^[1]; Zhou, Hua ^[5]; Li, Jia ^[3]; Liu, Jian ^[2];

^[7]

Tsinghua Univ., Beijing (China)
Univ. of Tennessee, Knoxville, TN (United States)
Tsinghua Univ., Shenzhen (China)
State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Chinese Academy of Sciences (CAS), Beijing (China)
Tsinghua Univ., Beijing (China); RIKEN Center for Emergent Matter Science (CEMS) Wako (Japan); Frontier Science Center for Quantum Information Beijing (China)

Publication Date:: Thu Apr 15 00:00:00 EDT 2021

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Beijing Natural Science Foundation; Ministry of Science and Technology of the Republic of China (MOST); US Department of the Navy, Office of Naval Research (ONR); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC)

OSTI Identifier:: 1854164

Grant/Contract Number:: AC02-06CH11357; DMR-1848269

Resource Type:: Accepted Manuscript

Journal Name:: Advanced Functional Materials

Additional Journal Information:: Journal Volume: 31; Journal Issue: 25; Journal ID: ISSN 1616-301X

Publisher:: Wiley

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Wang, Meng, Hao, Lin, Yin, Fang, Yang, Xin, Shen, Shengchun, Zou, Nianlong, Cao, Hui, Yang, Junyi, Lu, Nianpeng, Wu, Yongshun, Zhang, Jianbing, Zhou, Hua, Li, Jia, Liu, Jian, and Yu, Pu. Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling.  United States: N. p., 2021. 
Web.  doi:10.1002/adfm.202100261.

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                    Wang, Meng, Hao, Lin, Yin, Fang, Yang, Xin, Shen, Shengchun, Zou, Nianlong, Cao, Hui, Yang, Junyi, Lu, Nianpeng, Wu, Yongshun, Zhang, Jianbing, Zhou, Hua, Li, Jia, Liu, Jian, & Yu, Pu. Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling.  United States.  https://doi.org/10.1002/adfm.202100261

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                    Wang, Meng, Hao, Lin, Yin, Fang, Yang, Xin, Shen, Shengchun, Zou, Nianlong, Cao, Hui, Yang, Junyi, Lu, Nianpeng, Wu, Yongshun, Zhang, Jianbing, Zhou, Hua, Li, Jia, Liu, Jian, and Yu, Pu. Thu .  
"Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling".  United States.  https://doi.org/10.1002/adfm.202100261.  https://www.osti.gov/servlets/purl/1854164.

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@article{osti_1854164,

  title        = {Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling},

  author       = {Wang, Meng and Hao, Lin and Yin, Fang and Yang, Xin and Shen, Shengchun and Zou, Nianlong and Cao, Hui and Yang, Junyi and Lu, Nianpeng and Wu, Yongshun and Zhang, Jianbing and Zhou, Hua and Li, Jia and Liu, Jian and Yu, Pu},

  abstractNote = {Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interest especially for their electron-doped states. However, previous experiments have been largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here, an ionic-liquid-gating-induced protonation method is utilized to achieve electron-doping into a 5d Mott-insulator built with a SrIrO3/SrTiO3 superlattice (SL), and a systematic mapping of its electron-doped phase diagram is achieved with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolves into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed SL structure can be readily extended into other systems with more exotic states to explore.},

  doi          = {10.1002/adfm.202100261},

  journal      = {Advanced Functional Materials},

  number       = 25,

  volume       = 31,

  place        = {United States},

  year         = {Thu Apr 15 00:00:00 EDT 2021},

  month        = {Thu Apr 15 00:00:00 EDT 2021}

}

Copy to clipboard

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Title: Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Abstract

Citation Formats

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Perovskite nickelates as electric-field sensors in salt water journal, December 2017

Weak ferromagnetism, metal-to-nonmetal transition, and negative differential resistivity in single-crystal Sr 2 IrO 4 journal, May 1998

Universality of pseudogap and emergent order in lightly doped Mott insulators journal, September 2016

Manipulation of electronic structure via alteration of local orbital environment in [ ( SrIr O 3 ) m , ( SrTi O 3 ) ] ( m = 1 , 2 , and ∞ ) superlattices journal, December 2016

Correlated electrons in high-temperature superconductors journal, July 1994

Electron-doped Sr 2 IrO 4 − δ ( 0 ≤ δ ≤ 0.04 ) : Evolution of a disordered J eff = 1 2 Mott insulator into an exotic metallic state journal, September 2010

Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces journal, April 2008

Variationally optimized atomic orbitals for large-scale electronic structures journal, April 2003

Ab initio Studies on the Interplay between Spin-Orbit Interaction and Coulomb Correlation in Sr 2 IrO 4 and Ba 2 IrO 4 journal, February 2012

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Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State in 5 d Transition Metal Oxides Sr n + 1 Ir n O 3 n + 1 ( n = 1 , 2, and ∞ ) journal, November 2008

Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff = 1/2 Mott semiconductor journal, November 2019

Twisted Hubbard Model for Sr 2 IrO 4 : Magnetism and Possible High Temperature Superconductivity journal, March 2011

Tuning the Electronic Structure of Sr 2 IrO 4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy journal, May 2015

Influence of electron doping on the ground state of ( Sr 1 − x La x ) 2 IrO 4 journal, August 2015

Unidirectional spin density wave state in metallic (Sr1−xLax)2IrO4 journal, January 2018

Electric-field control of tri-state phase transformation with a selective dual-ion switch journal, May 2017

Topological semimetal and Fermi-arc surface states in the electronic structure of pyrochlore iridates journal, May 2011

The Temperature Dependence of the Conductivity near the Localization Threshold: Temperature Dependence of the Conductivity near the Localization Threshold journal, December 1983

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Electronic structure and magnetic properties of iridate superlattice SrIrO ₃ /SrTiO ₃
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From ultrasoft pseudopotentials to the projector augmented-wave method
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Density-functional theory and strong interactions: Orbital ordering in Mott-Hubbard insulators
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Phase-Sensitive Observation of a Spin-Orbital Mott State in Sr2IrO4
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Collapse of the Mott Gap and Emergence of a Nodal Liquid in Lightly Doped ${Sr}_{2} {IrO}_{4}$
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Observation of a d-wave gap in electron-doped Sr2IrO4
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Monte Carlo Study of an Unconventional Superconducting Phase in Iridium Oxide $J_{eff} = 1 / 2$ Mott Insulators Induced by Carrier Doping
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Persistent Paramagnons Deep in the Metallic Phase of ${Sr}_{2 - x} {La}_{x} {IrO}_{4}$
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Magnetic-field-induced metal-insulator phenomena in $\Pr_{1 - x} {Ca}_{x} Mn O_{3}$ with controlled charge-ordering instability
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XANES and EXAFS Studies on the Ir-O Bond Covalency in Ionic Iridium Perovskites
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Spin-Orbit Physics Giving Rise to Novel Phases in Correlated Systems: Iridates and Related Materials
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Novel $J_{eff} = 1 / 2$ Mott State Induced by Relativistic Spin-Orbit Coupling in ${Sr}_{2} {IrO}_{4}$
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A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry
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Room-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide
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Engineering a Spin-Orbital Magnetic Insulator by Tailoring Superlattices
journal, June 2015

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Perovskite nickelates as electric-field sensors in salt water
journal, December 2017

Weak ferromagnetism, metal-to-nonmetal transition, and negative differential resistivity in single-crystal ${Sr}_{2} {IrO}_{4}$
journal, May 1998

Universality of pseudogap and emergent order in lightly doped Mott insulators
journal, September 2016

Manipulation of electronic structure via alteration of local orbital environment in $[{(SrIr O_{3})}_{m}, (SrTi O_{3})] (m = 1, 2, and \infty)$ superlattices
journal, December 2016

Correlated electrons in high-temperature superconductors
journal, July 1994

Electron-doped ${Sr}_{2} {IrO}_{4 - δ}$ $(0 \leq δ \leq 0.04)$ : Evolution of a disordered $J_{eff} = \frac{1}{2}$ Mott insulator into an exotic metallic state
journal, September 2010

Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces
journal, April 2008

Variationally optimized atomic orbitals for large-scale electronic structures
journal, April 2003

Ab initio Studies on the Interplay between Spin-Orbit Interaction and Coulomb Correlation in ${Sr}_{2} {IrO}_{4}$ and ${Ba}_{2} {IrO}_{4}$
journal, February 2012

Electric-field-induced superconductivity in an insulator
journal, October 2008

Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State in $5 d$ Transition Metal Oxides ${Sr}_{n + 1} {Ir}_{n} O_{3 n + 1}$ ( $n = 1$ , 2, and $\infty$ )
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Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff = 1/2 Mott semiconductor
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Twisted Hubbard Model for ${Sr}_{2} {IrO}_{4}$ : Magnetism and Possible High Temperature Superconductivity
journal, March 2011

Tuning the Electronic Structure of Sr ₂ IrO ₄ Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy
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Influence of electron doping on the ground state of $({Sr}_{1 - x} {La}_{x})_{2} {IrO}_{4}$
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Unidirectional spin density wave state in metallic (Sr1−xLax)2IrO4
journal, January 2018

Electric-field control of tri-state phase transformation with a selective dual-ion switch
journal, May 2017

Topological semimetal and Fermi-arc surface states in the electronic structure of pyrochlore iridates
journal, May 2011

The Temperature Dependence of the Conductivity near the Localization Threshold: Temperature Dependence of the Conductivity near the Localization Threshold
journal, December 1983