Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
Abstract
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO2), a water-insoluble GeO2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga2O3. The subsequent realization of single-crystalline r-GeO2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-qualitymore »
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States)
- Cornell Univ., Ithaca, NY (United States)
- Publication Date:
- Research Org.:
- Univ. of Texas, Austin, TX (United States); Krell Institute, Ames, IA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1853466
- Alternate Identifier(s):
- OSTI ID: 1804971
- Grant/Contract Number:
- SC0020129; SC0020347; SC0018941; DMR-1810119; 1534221; DMR-1539918; DMR-1847847
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 118; Journal Issue: 26; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Physics; Thin films; Doping; First-principle calculations; Electronic transport; Power electronics; Semiconductors; Oxides; Epitaxy; Thermal conductivity
Citation Formats
Chae, Sieun, Mengle, Kelsey, Bushick, Kyle, Lee, Jihang, Sanders, Nocona, Deng, Zihao, Mi, Zetian, Poudeu, Pierre F. P., Paik, Hanjong, Heron, John T., and Kioupakis, Emmanouil. Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2. United States: N. p., 2021.
Web. doi:10.1063/5.0056674.
Chae, Sieun, Mengle, Kelsey, Bushick, Kyle, Lee, Jihang, Sanders, Nocona, Deng, Zihao, Mi, Zetian, Poudeu, Pierre F. P., Paik, Hanjong, Heron, John T., & Kioupakis, Emmanouil. Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2. United States. https://doi.org/10.1063/5.0056674
Chae, Sieun, Mengle, Kelsey, Bushick, Kyle, Lee, Jihang, Sanders, Nocona, Deng, Zihao, Mi, Zetian, Poudeu, Pierre F. P., Paik, Hanjong, Heron, John T., and Kioupakis, Emmanouil. Thu .
"Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2". United States. https://doi.org/10.1063/5.0056674. https://www.osti.gov/servlets/purl/1853466.
@article{osti_1853466,
title = {Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2},
author = {Chae, Sieun and Mengle, Kelsey and Bushick, Kyle and Lee, Jihang and Sanders, Nocona and Deng, Zihao and Mi, Zetian and Poudeu, Pierre F. P. and Paik, Hanjong and Heron, John T. and Kioupakis, Emmanouil},
abstractNote = {Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO2), a water-insoluble GeO2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga2O3. The subsequent realization of single-crystalline r-GeO2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.},
doi = {10.1063/5.0056674},
journal = {Applied Physics Letters},
number = 26,
volume = 118,
place = {United States},
year = {Thu Jul 01 00:00:00 EDT 2021},
month = {Thu Jul 01 00:00:00 EDT 2021}
}
Works referenced in this record:
ORIGIN OF THE BLUE LUMINESCENCE OF β-Ga2O3
journal, August 1998
- Binet, Laurent; Gourier, Didier
- Journal of Physics and Chemistry of Solids, Vol. 59, Issue 8
Hydrogen in Semiconductors
journal, August 2006
- Van de Walle, Chris G.; Neugebauer, Jörg
- Annual Review of Materials Research, Vol. 36, Issue 1
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
journal, February 2012
- Sasaki, Kohei; Kuramata, Akito; Masui, Takekazu
- Applied Physics Express, Vol. 5, Issue 3
Recent Development of Boron Nitride towards Electronic Applications
journal, April 2017
- Izyumskaya, Natalia; Demchenko, Denis O.; Das, Saikat
- Advanced Electronic Materials, Vol. 3, Issue 5
Wide-Gap Alloy: A Transparent p -Type Oxide
journal, February 2020
- Liu, Chao Ping; Egbo, Kingsley O.; Ho, Chun Yuen
- Physical Review Applied, Vol. 13, Issue 2
Hole Compensation Mechanism of P-Type GaN Films
journal, May 1992
- Nakamura, Shuji; Iwasa, Naruhito; Senoh, Masayuki
- Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 5A
GaN, AlN, and InN: A review
journal, July 1992
- Strite, S.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 4
Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)
journal, November 2004
- Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
- Applied Physics Letters, Vol. 85, Issue 20
Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers
journal, June 2003
- Teukam, Zéphirin; Chevallier, Jacques; Saguy, Cécile
- Nature Materials, Vol. 2, Issue 7
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
journal, February 2017
- Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo
- Japanese Journal of Applied Physics, Vol. 56, Issue 3
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
journal, September 2019
- Chaudhuri, Reet; Bader, Samuel James; Chen, Zhen
- Science, Vol. 365, Issue 6460
Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride
journal, January 2020
- Chen, Ke; Song, Bai; Ravichandran, Navaneetha K.
- Science, Vol. 367, Issue 6477
The n-type doping of diamond: Present status and pending questions
journal, December 2007
- Pinault, M. -A.; Barjon, J.; Kociniewski, T.
- Physica B: Condensed Matter, Vol. 401-402
Exciton structure in the u.v.-absorption edge of tetragonal GeO2
journal, March 1978
- Stapelbroek, M.; Evans, B. D.
- Solid State Communications, Vol. 25, Issue 11
Gallium oxide (Ga 2 O 3 ) metal-semiconductor field-effect transistors on single-crystal β-Ga 2 O 3 (010) substrates
journal, January 2012
- Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito
- Applied Physics Letters, Vol. 100, Issue 1
Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level
journal, September 1981
- Dorkel, J. M.; Leturcq, Ph.
- Solid-State Electronics, Vol. 24, Issue 9
Quasiparticle band structure and optical properties of rutile GeO 2 , an ultra-wide-band-gap semiconductor
journal, August 2019
- Mengle, Kelsey A.; Chae, Sieun; Kioupakis, Emmanouil
- Journal of Applied Physics, Vol. 126, Issue 8
Thermal conductivity of rutile germanium dioxide
journal, September 2020
- Chae, S.; Mengle, K. A.; Lu, R.
- Applied Physics Letters, Vol. 117, Issue 10
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa 2 O 4 single crystals
journal, February 2019
- Galazka, Zbigniew; Ganschow, Steffen; Schewski, Robert
- APL Materials, Vol. 7, Issue 2
Electron and hole mobility of rutile GeO 2 from first principles: An ultrawide-bandgap semiconductor for power electronics
journal, November 2020
- Bushick, K.; Mengle, K. A.; Chae, S.
- Applied Physics Letters, Vol. 117, Issue 18
Role of hydrogen in doping of GaN
journal, March 1996
- Neugebauer, Jörg; Van de Walle, Chris G.
- Applied Physics Letters, Vol. 68, Issue 13
Infrared Lattice Vibrations and Free-Electron Dispersion in GaN
journal, January 1973
- Barker, A. S.; Ilegems, M.
- Physical Review B, Vol. 7, Issue 2
Epitaxial stabilization of rutile germanium oxide thin film by molecular beam epitaxy
journal, August 2020
- Chae, S.; Paik, H.; Vu, N. M.
- Applied Physics Letters, Vol. 117, Issue 7
Progress in efficient doping of high aluminum-containing group III-nitrides
journal, March 2018
- Liang, Y. -H.; Towe, E.
- Applied Physics Reviews, Vol. 5, Issue 1
Local environment of silicon in cubic boron nitride
journal, December 2013
- Murata, Hidenobu; Taniguchi, Takashi; Hishita, Shunichi
- Journal of Applied Physics, Vol. 114, Issue 23
Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections
journal, January 2019
- Bushick, Kyle; Mengle, Kelsey; Sanders, Nocona
- Applied Physics Letters, Vol. 114, Issue 2
Diamond power devices: state of the art, modelling, figures of merit and future perspective
journal, December 2019
- Donato, N.; Rouger, N.; Pernot, J.
- Journal of Physics D: Applied Physics, Vol. 53, Issue 9
Semiconducting cubic boron nitride
journal, February 1998
- Litvinov, Dmitri; Taylor, Charles A.; Clarke, Roy
- Diamond and Related Materials, Vol. 7, Issue 2-5
Alloy scattering of -type carriers in
journal, July 2006
- Fahy, S.; Lindsay, A.; Ouerdane, H.
- Physical Review B, Vol. 74, Issue 3
Impact ionization in β-Ga 2 O 3
journal, August 2018
- Ghosh, Krishnendu; Singisetti, Uttam
- Journal of Applied Physics, Vol. 124, Issue 8
Laser ablation of Ge in an oxygen environment: plasma and film properties
journal, January 1992
- Afonso, C. N.; Vega, F.; Solis, J.
- Applied Surface Science, Vol. 54
Ultra-sensitive pressure dependence of bandgap of rutile-GeO 2 revealed by many body perturbation theory
journal, August 2015
- Samanta, Atanu; Jain, Manish; Singh, Abhishek K.
- The Journal of Chemical Physics, Vol. 143, Issue 6
First-principles study of point defects in LiGaO 2
journal, October 2019
- Boonchun, Adisak; Dabsamut, Klichchupong; Lambrecht, Walter R. L.
- Journal of Applied Physics, Vol. 126, Issue 15
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
journal, December 2017
- Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.
- Advanced Electronic Materials, Vol. 4, Issue 1
Increased electron mobility in n-type Si-doped AlN by reducing dislocation density
journal, October 2006
- Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
- Applied Physics Letters, Vol. 89, Issue 18
Lack of quantum confinement in nanolayers
journal, August 2017
- Peelaers, Hartwin; Van de Walle, Chris G.
- Physical Review B, Vol. 96, Issue 8
Role of self-trapping in luminescence and -type conductivity of wide-band-gap oxides
journal, February 2012
- Varley, J. B.; Janotti, A.; Franchini, C.
- Physical Review B, Vol. 85, Issue 8
Preparation and characterization of germanium oxide thin films
journal, November 1989
- Caperaa, C.; Baud, G.; Besse, J. P.
- Materials Research Bulletin, Vol. 24, Issue 11
Vacancy-impurity complexes and limitations for implantation doping of diamond
journal, July 2005
- Goss, J. P.; Briddon, P. R.; Rayson, M. J.
- Physical Review B, Vol. 72, Issue 3
First-principles study of n- and p-type doping opportunities in LiGaO 2
journal, May 2020
- Dabsamut, Klichchupong; Boonchun, Adisak; Lambrecht, Walter R. L.
- Journal of Physics D: Applied Physics, Vol. 53, Issue 27
A computational survey of semiconductors for power electronics
journal, January 2019
- Gorai, Prashun; McKinney, Robert W.; Haegel, Nancy M.
- Energy & Environmental Science, Vol. 12, Issue 11
The intrinsic thermal conductivity of AIN
journal, January 1987
- Slack, Glen A.; Tanzilli, R. A.; Pohl, R. O.
- Journal of Physics and Chemistry of Solids, Vol. 48, Issue 7
Structural change of GeO2 under pressure
journal, May 1994
- Kawasaki, S.; Ohtaka, O.; Yamanaka, T.
- Physics and Chemistry of Minerals, Vol. 20, Issue 8
The structure of amorphous, crystalline and liquid GeO 2
journal, October 2006
- Micoulaut, M.; Cormier, L.; Henderson, G. S.
- Journal of Physics: Condensed Matter, Vol. 18, Issue 45
CO_2 Laser irradiation of GeO_2 planar waveguide fabricated by rf-sputtering
journal, January 2013
- Chiasera, A.; Macchi, C.; Mariazzi, S.
- Optical Materials Express, Vol. 3, Issue 9
Lattice Vibration Spectra of Aluminum Nitride
journal, June 1967
- Collins, A. T.; Lightowlers, E. C.; Dean, P. J.
- Physical Review, Vol. 158, Issue 3, p. 833-838
Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study
journal, August 2006
- Sundqvist, Jonas; Lu, Jun; Ottosson, Mikael
- Thin Solid Films, Vol. 514, Issue 1-2
Anisotropy of the electron effective mass in rutile SnO 2 determined by infrared ellipsometry : LPP modes in SnO
journal, October 2013
- Feneberg, Martin; Lidig, Christian; Lange, Karsten
- physica status solidi (a), Vol. 211, Issue 1
Infrared reflectance of single crystal tetragonal GeO2
journal, January 1972
- Roessler, D. M.; Albers, W. A.
- Journal of Physics and Chemistry of Solids, Vol. 33, Issue 2
Hole polarons and -type doping in boron nitride polymorphs
journal, September 2017
- Weston, L.; Wickramaratne, D.; Van de Walle, C. G.
- Physical Review B, Vol. 96, Issue 10
Activated reactive laser deposition of GeO 2 films
journal, August 1994
- Witanachchi, Sarath; Wolf, Paul J.
- Journal of Applied Physics, Vol. 76, Issue 4
p-Type Ultrawide-Band-Gap Spinel ZnGa 2 O 4 : New Perspectives for Energy Electronics
journal, March 2020
- Chikoidze, Ekaterine; Sartel, Corinne; Madaci, Ismail
- Crystal Growth & Design, Vol. 20, Issue 4
First-principles study of high-field-related electronic behavior of group-III nitrides
journal, September 2014
- Yan, Qimin; Kioupakis, Emmanouil; Jena, Debdeep
- Physical Review B, Vol. 90, Issue 12
Thin film properties of germanium oxide synthesized by pulsed laser sputtering in vacuum and oxygen environments
journal, September 1993
- Wolf, Paul J.; Christensen, Thomas M.; Coit, Nathan G.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 11, Issue 5
BerkeleyGW: A massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures
journal, June 2012
- Deslippe, Jack; Samsonidze, Georgy; Strubbe, David A.
- Computer Physics Communications, Vol. 183, Issue 6
Quasiparticle self-consistent band structures and high-pressure phase transitions of and
journal, January 2021
- Radha, Santosh Kumar; Ratnaparkhe, Amol; Lambrecht, Walter R. L.
- Physical Review B, Vol. 103, Issue 4
Efficient ab initio calculations of electron-defect scattering and defect-limited carrier mobility
journal, March 2019
- Lu, I-Te; Zhou, Jin-Jian; Bernardi, Marco
- Physical Review Materials, Vol. 3, Issue 3
EPW: A program for calculating the electron–phonon coupling using maximally localized Wannier functions
journal, December 2010
- Noffsinger, Jesse; Giustino, Feliciano; Malone, Brad D.
- Computer Physics Communications, Vol. 181, Issue 12, p. 2140-2148
Doping of AlGaN Alloys
journal, January 1999
- Van de Walle, Chris G.; Stampfl, C.; Neugebauer, J.
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Issue S1
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
journal, December 2014
- Bryan, Zachary; Bryan, Isaac; Gaddy, Benjamin E.
- Applied Physics Letters, Vol. 105, Issue 22
Evaluation of the composition of reactively evaporated GeOx thin films from optical transmission and XPS data
journal, December 1988
- Beynon, J.; El-Samanoudy, M. M.; Short, E. L.
- Journal of Materials Science, Vol. 23, Issue 12
Rutile GeO 2 : An ultrawide-band-gap semiconductor with ambipolar doping
journal, March 2019
- Chae, S.; Lee, J.; Mengle, K. A.
- Applied Physics Letters, Vol. 114, Issue 10
almaBTE : A solver of the space–time dependent Boltzmann transport equation for phonons in structured materials
journal, November 2017
- Carrete, Jesús; Vermeersch, Bjorn; Katre, Ankita
- Computer Physics Communications, Vol. 220
Microstructure characterisation of ALD-grown epitaxial SnO2 thin films
journal, January 2004
- Lu, J.; Sundqvist, J.; Ottosson, M.
- Journal of Crystal Growth, Vol. 260, Issue 1-2
MOCVD homoepitaxy of Si-doped (010) β-Ga 2 O 3 thin films with superior transport properties
journal, June 2019
- Feng, Zixuan; Anhar Uddin Bhuiyan, A. F. M.; Karim, Md Rezaul
- Applied Physics Letters, Vol. 114, Issue 25
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
journal, May 2019
- Pandey, A.; Liu, X.; Deng, Z.
- Physical Review Materials, Vol. 3, Issue 5
Chemical and crystallographic characterization of crystals grown by chemical vapour transport in the Fe2O3 GeO2 system
journal, February 1984
- Agafonov, V.; Michel, D.; Perez, M.
- Materials Research Bulletin, Vol. 19, Issue 2
On the feasibility of p-type Ga 2 O 3
journal, January 2018
- Kyrtsos, Alexandros; Matsubara, Masahiko; Bellotti, Enrico
- Applied Physics Letters, Vol. 112, Issue 3
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
journal, December 2017
- Chikoidze, Ekaterine; Fellous, Adel; Perez-Tomas, Amador
- Materials Today Physics, Vol. 3
Assessing High-Throughput Descriptors for Prediction of Transparent Conductors
journal, October 2018
- Woods-Robinson, Rachel; Broberg, Danny; Faghaninia, Alireza
- Chemistry of Materials, Vol. 30, Issue 22
GERMANIUM. XXXIX. THE POLYMORPHISM OF GERMANIUM DIOXIDE 1
journal, June 1932
- Laubengayer, A. W.; Morton, D. S.
- Journal of the American Chemical Society, Vol. 54, Issue 6
Electron-phonon interactions from first principles
journal, February 2017
- Giustino, Feliciano
- Reviews of Modern Physics, Vol. 89, Issue 1
Orientation relationship of polycrystalline Pd-doped SnO2 thin film deposits on sapphire substrates
journal, November 2008
- Kwon, Ji-Hwan; Choi, Yun-Hyuk; Kim, Dai Hong
- Thin Solid Films, Vol. 517, Issue 2
Optical properties of germanium dioxide in the rutile structure
journal, June 2005
- Sahnoun, M.; Daul, C.; Khenata, R.
- The European Physical Journal B, Vol. 45, Issue 4
Martensitic transition in single-crystalline α-GeO2 at compression
journal, April 2000
- Brazhkin, V. V.; Tat’yanin, E. V.; Lyapin, A. G.
- Journal of Experimental and Theoretical Physics Letters, Vol. 71, Issue 7
First-principles study of structural, elastic, electronic and optical properties of rutile GeO2 and α-quartz GeO2
journal, October 2010
- Liu, Qi-Jun; Liu, Zheng-Tang; Feng, Li-Ping
- Solid State Sciences, Vol. 12, Issue 10
Space charge conduction and electrical behaviour of aluminium nitride single crystals
journal, May 1965
- Edwards, J.; Kawabe, K.; Stevens, G.
- Solid State Communications, Vol. 3, Issue 5
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
journal, July 2000
- Ibbetson, J. P.; Fini, P. T.; Ness, K. D.
- Applied Physics Letters, Vol. 77, Issue 2
Identification and design principles of low hole effective mass p-type transparent conducting oxides
journal, August 2013
- Hautier, Geoffroy; Miglio, Anna; Ceder, Gerbrand
- Nature Communications, Vol. 4, Issue 1
Deep level centers in silicon carbide: A review
journal, February 1999
- Lebedev, A. A.
- Semiconductors, Vol. 33, Issue 2
Intrinsic electron mobility limits in β -Ga 2 O 3
journal, November 2016
- Ma, Nan; Tanen, Nicholas; Verma, Amit
- Applied Physics Letters, Vol. 109, Issue 21
On the possibility of p-type SnO2
journal, January 2012
- Scanlon, David O.; Watson, Graeme W.
- Journal of Materials Chemistry, Vol. 22, Issue 48
Correlation between optical properties and chemical composition of sputter-deposited germanium oxide (GeOx) films
journal, May 2014
- Murphy, N. R.; Grant, J. T.; Sun, L.
- Optical Materials, Vol. 36, Issue 7
Transition to a crystalline high-pressure phase in at room temperature
journal, April 2000
- Haines, J.; Léger, J. M.; Chateau, C.
- Physical Review B, Vol. 61, Issue 13
EPW: Electron–phonon coupling, transport and superconducting properties using maximally localized Wannier functions
journal, December 2016
- Poncé, S.; Margine, E. R.; Verdi, C.
- Computer Physics Communications, Vol. 209
Transparent conducting materials discovery using high-throughput computing
journal, June 2019
- Brunin, Guillaume; Ricci, Francesco; Ha, Viet-Anh
- npj Computational Materials, Vol. 5, Issue 1
Anisotropic thermal conductivity in single crystal β-gallium oxide
journal, March 2015
- Guo, Zhi; Verma, Amit; Wu, Xufei
- Applied Physics Letters, Vol. 106, Issue 11
Diamond and Cubic Boron Nitride: Properties, Growth and Applications
conference, January 2010
- Soltani, A.; Talbi, A.; Mortet, V.
- 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗, AIP Conference Proceedings
Photo-induced phenomena in sputtered GeO2 films
journal, January 2005
- Terakado, Nobuaki; Tanaka, Keiji
- Journal of Non-Crystalline Solids, Vol. 351, Issue 1
First-principles calculations of the near-edge optical properties of β-Ga2O3
journal, November 2016
- Mengle, Kelsey A.; Shi, Guangsha; Bayerl, Dylan
- Applied Physics Letters, Vol. 109, Issue 21
Top-seeded flux growth of tetragonal GeO2
journal, September 1970
- Goodrum, John W.
- Journal of Crystal Growth, Vol. 7, Issue 2
A High-Resolution Diffraction and Spectroscopic Study of the Low-Temperature Phase Transformation of Hexagonal to Tetragonal GeO 2 with and without Alkali Hydroxide Promotion
journal, April 2011
- Bielz, Thomas; Soisuwan, Soipatta; Kaindl, Reinhard
- The Journal of Physical Chemistry C, Vol. 115, Issue 19
Pressure-Induced Crossover between Diffusive and Displacive Mechanisms of Phase Transitions in Single-Crystalline
journal, April 2003
- Brazhkin, V. V.; Lyapin, A. G.; Voloshin, R. N.
- Physical Review Letters, Vol. 90, Issue 14
Shallow Valence Band of Rutile GeO 2 and P-type Doping
journal, November 2020
- Niedermeier, Christian A.; Ide, Keisuke; Katase, Takayoshi
- The Journal of Physical Chemistry C, Vol. 124, Issue 47