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Title: Second-Order Josephson Effect in Excitonic Insulators

Journal Article · · Physical Review Letters
ORCiD logo [1];  [2]; ORCiD logo [3];  [4]
  1. Columbia Univ., New York, NY (United States); OSTI
  2. Columbia Univ., New York, NY (United States)
  3. Flatiron Inst., New York, NY (United States); Univ. of Ljubljana (Slovenia); Jožef Stefan Inst., Ljubljana (Slovenia)
  4. Columbia Univ., New York, NY (United States); Flatiron Inst., New York, NY (United States)

We show that in electron-hole bilayers with excitonic orders arising from conduction and valence bands formed by atomic orbitals that have different parities, nonzero interlayer tunneling leads to a second-order Josephson effect. This means the interlayer electrical current is related to the phase of the excitonic order parameter as J = Jc sin 2θ instead of J = Jc sin θ and that the system has two degenerate ground states at θ = 0, π that can be switched by an interlayer voltage pulse. When generalized to a three dimensional stack of alternating electron-hole planes or a two dimensional stack of chains, the ac Josephson effect implies that electric field pulses perpendicular to the layers and chains can steer the order parameter phase between the two degenerate ground states, making these devices ultrafast memories. Here, the order parameter steering also applies to the excitonic insulator candidate Ta2NiSe5.

Research Organization:
Columbia Univ., New York, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0019443
OSTI ID:
1853268
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 127; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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