Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

Ren, Haowen; Wu, Shih-Yu; Sun, Jonathan Z.; Fullerton, Eric E.

doi:10.1063/5.0060461

Title: Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

Journal Article · 31 August 2021 · APL Materials

DOI: https://doi.org/10.1063/5.0060461 · OSTI ID:1852981

^[1]; Wu, Shih-Yu ^[2];

^[2];

^[3]

Univ. of California San Diego, La Jolla, CA (United States); IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center; Univ. of California San Diego, La Jolla, CA (United States)
IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
Univ. of California San Diego, La Jolla, CA (United States); IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C); Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0019273

OSTI ID:: 1852981

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 9 Vol. 9; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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