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Title: Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers

Abstract

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm-2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 1014 cm-3, implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variationmore » of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z1/2 and EH6/7.« less

Authors:
 [1]; ORCiD logo [1];  [1]; ORCiD logo [1]
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  1. Univ. of South Carolina, Columbia, SC (United States). Dept. of Electrical Engineering
Publication Date:
Research Org.:
Univ. of South Carolina, Columbia, SC (United States); UT-Battelle LLC/ORNL, Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE); University of South Carolina
OSTI Identifier:
1850520
Grant/Contract Number:  
NE0008662; AC07-05ID14517; 15530-E404; 15530-E422
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 129; Journal Issue: 24; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; charge transport; semiconductors; electrical properties and parameters; deep level transient spectroscopy; epitaxy; current-voltage characteristic; Schottky barriers; radiation detectors

Citation Formats

Kleppinger, Joshua W., Chaudhuri, Sandeep K., Karadavut, OmerFaruk, and Mandal, Krishna C. Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers. United States: N. p., 2021. Web. doi:10.1063/5.0049218.
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Kleppinger, Joshua W., Chaudhuri, Sandeep K., Karadavut, OmerFaruk, & Mandal, Krishna C. Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers. United States. https://doi.org/10.1063/5.0049218
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Kleppinger, Joshua W., Chaudhuri, Sandeep K., Karadavut, OmerFaruk, and Mandal, Krishna C. Mon . "Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers". United States. https://doi.org/10.1063/5.0049218. https://www.osti.gov/servlets/purl/1850520.
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@article{osti_1850520,
title = {Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers},
author = {Kleppinger, Joshua W. and Chaudhuri, Sandeep K. and Karadavut, OmerFaruk and Mandal, Krishna C.},
abstractNote = {Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm-2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 1014 cm-3, implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variation of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z1/2 and EH6/7.},
doi = {10.1063/5.0049218},
journal = {Journal of Applied Physics},
number = 24,
volume = 129,
place = {United States},
year = {Mon Jun 28 00:00:00 EDT 2021},
month = {Mon Jun 28 00:00:00 EDT 2021}
}
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