Correlation-driven electron-hole asymmetry in graphene field effect devices

Dale, Nicholas; Mori, Ryo; Utama, M. Iqbal Bakti; Denlinger, Jonathan D.; Stansbury, Conrad; Fatuzzo, Claudia G.; Zhao, Sihan; Lee, Kyunghoon; Taniguchi, T; Watanabe, K; Jozwiak, Chris; Bostwick, Aaron; Rotenberg, Eli; Koch, Roland J.; Wang, Feng; Lanzara, Alessandra

doi:10.1038/s41535-021-00404-8

Title: Correlation-driven electron-hole asymmetry in graphene field effect devices

Journal Article · 18 January 2022 · npj Quantum Materials

DOI: https://doi.org/10.1038/s41535-021-00404-8 · OSTI ID:1848074

Dale, Nicholas ^[1]; Mori, Ryo ^[2]; Utama, M. Iqbal Bakti ^[3]; Denlinger, Jonathan D. ^[4]; Stansbury, Conrad ^[1]; Fatuzzo, Claudia G. ^[5]; Zhao, Sihan ^[2]; Lee, Kyunghoon ^[1]; Taniguchi, T ^[6]; Watanabe, K ^[6]; Jozwiak, Chris ^[4]; Bostwick, Aaron ^[4]; Rotenberg, Eli ^[4]; Koch, Roland J. ^[4]; Wang, Feng ^[1]; Lanzara, Alessandra ^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Consiglio Nazionale delle Ricerche (ISPC-CNR), Catania (Italy); Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
National Institute for Materials Science, Tsukuba (Japan)

Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in twisted graphene and moiré heterostructures has spurred interest into whether it stems from single-particle effects or from correlations, which are core to the emergence of intriguing phases in moiré systems. Here, we report an effective way to access electron-hole asymmetry in 2D materials by directly measuring the quasiparticle self-energy in graphene/Boron Nitride field-effect devices. As the chemical potential moves from the hole to the electron-doped side, we see an increased strength of electronic correlations manifested by an increase in the band velocity and inverse quasiparticle lifetime. These results suggest that electronic correlations intrinsically drive the electron-hole asymmetry in graphene and by leveraging this asymmetry can provide alternative avenues to generate exotic phases in twisted moiré heterostructures.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; MEXT, Japan; JSPS Kakenhi

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1848074

Journal Information:: npj Quantum Materials, Journal Name: npj Quantum Materials Journal Issue: 1 Vol. 7; ISSN 2397-4648

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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