Deep level transient spectroscopy and photoluminescence studies of hole and electron traps in ZnSnP₂ bulk crystals

Journal Article · 23 January 2022 · Japanese Journal of Applied Physics

DOI: https://doi.org/10.35848/1347-4065/ac468a · OSTI ID:1847091

Kuwano, Taro  ^[1]; Katsube, Ryoji  ^[1]; Johnston, Steve ^[2]; Tamboli, Adele C.  ^[2]; Nose, Yoshitaro  ^[1]

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1. Kyoto Univ. (Japan)
2. National Renewable Energy Lab. (NREL), Golden, CO (United States)

ZnSnP₂, an emerging inorganic material for solar cells, was characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and donor-like traps with shallow energy levels were detected by DLTS analysis. The previous study based on first-principle calculation also suggested such traps were due to antisite defects of Zn and Sn. PL measurements also revealed sub-gap transitions related to these trap levels. Furthermore, DLTS found a trap with a deep level in ZnSnP₂. A short lifetime of minority carrier in previous work might be due to such trap, coming from phosphorus vacancies and/or zinc interstitials suggested by the first-principle study.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1847091
• Report Number(s): NREL/JA-5K00-78346; MainId:32263; UUID:6fca1ca3-7444-4566-b12f-5b813a2ebf8a; MainAdminID:63950
• Journal Information: Japanese Journal of Applied Physics, Journal Name: Japanese Journal of Applied Physics Journal Issue: 2 Vol. 61; ISSN 0021-4922
• Publisher: Japan Society of Applied PhysicsCopyright Statement
• Country of Publication: United States
• Language: English