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Title: Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors

Abstract

Abstract Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution‐processable semiconductors such as organic semiconductors (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr 3 perovskite quantum dots (PQDs) and OSCs, fabrication of solution‐processed PQD/OSC PHJs are reported. The phototransistors based on bilayer PQD/PDVT‐10 PHJs show responsivity up to 1.64 × 10 4 A W −1 , specific detectivity of 3.17 × 10 12 Jones, and photosensitivity of 5.33 × 10 6 when illuminated by 450 nm light. Such high photodetection performance is attributed to efficient charge dissociation and transport, as well as the photogating effect in the PHJs. Furthermore, the tri‐layer PDVT‐10/PQD/Y6 PHJs are used to construct photodiodes working in self‐powered mode, which exhibit broad range photoresponse from ultraviolet to near‐infrared, with responsivity approaching 10 −1 A W −1 and detectivity over 10 6 Jones. These results present a convenient and scalable production processes for solution‐processed PHJs and show their great potential for optoelectronic applications.

Authors:
 [1];  [2];  [3];  [3];  [3];  [3];  [3];  [3];  [4];  [5];  [3];  [2];  [2];  [1];  [6]; ORCiD logo [7]
+ Show Author Affiliations
  1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China
  2. Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices the Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215123 China
  3. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China
  4. Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education College of Chemistry Xiangtan University Xiangtan 411105 China
  5. State Key Laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 China
  6. Center for Polymers and Organic Solids Department of Chemistry and Biochemistry University of California at Santa Barbara Santa Barbara CA 93106 USA
  7. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China, Shenzhen Research Institute of Hunan University Shenzhen 518063 China
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Key Research and Development Program; National Natural Science Foundation of China (NSFC); Natural Science Foundation of Hunan Province; Shenzhen Science and Technology Innovation Commission
OSTI Identifier:
1846826
Alternate Identifier(s):
OSTI ID: 1846827; OSTI ID: 1904408
Grant/Contract Number:  
DE‐SC0017659; SC0017659; 2021YFA1200700; 62074054; U21A20497; 2019GK2245; 2020JJ1002; RCYX20200714114537036
Resource Type:
Published Article
Journal Name:
Advanced Science
Additional Journal Information:
Journal Name: Advanced Science Journal Volume: 9 Journal Issue: 12; Journal ID: ISSN 2198-3844
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; CsPbBr3 quantum dots; organic semiconductors; photodetectors; planar heterojunctions

Citation Formats

Chen, Kaixuan, Zhang, Xuliang, Chen, Ping‐An, Guo, Jing, He, Mai, Chen, Yanqin, Qiu, Xincan, Liu, Yu, Chen, Huajie, Zeng, Zebing, Wang, Xiao, Yuan, Jianyu, Ma, Wanli, Liao, Lei, Nguyen, Thuc‐Quyen, and Hu, Yuanyuan. Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors. Germany: N. p., 2022. Web. doi:10.1002/advs.202105856.
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Chen, Kaixuan, Zhang, Xuliang, Chen, Ping‐An, Guo, Jing, He, Mai, Chen, Yanqin, Qiu, Xincan, Liu, Yu, Chen, Huajie, Zeng, Zebing, Wang, Xiao, Yuan, Jianyu, Ma, Wanli, Liao, Lei, Nguyen, Thuc‐Quyen, & Hu, Yuanyuan. Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors. Germany. https://doi.org/10.1002/advs.202105856
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Chen, Kaixuan, Zhang, Xuliang, Chen, Ping‐An, Guo, Jing, He, Mai, Chen, Yanqin, Qiu, Xincan, Liu, Yu, Chen, Huajie, Zeng, Zebing, Wang, Xiao, Yuan, Jianyu, Ma, Wanli, Liao, Lei, Nguyen, Thuc‐Quyen, and Hu, Yuanyuan. Tue . "Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors". Germany. https://doi.org/10.1002/advs.202105856.
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@article{osti_1846826,
title = {Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors},
author = {Chen, Kaixuan and Zhang, Xuliang and Chen, Ping‐An and Guo, Jing and He, Mai and Chen, Yanqin and Qiu, Xincan and Liu, Yu and Chen, Huajie and Zeng, Zebing and Wang, Xiao and Yuan, Jianyu and Ma, Wanli and Liao, Lei and Nguyen, Thuc‐Quyen and Hu, Yuanyuan},
abstractNote = {Abstract Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution‐processable semiconductors such as organic semiconductors (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr 3 perovskite quantum dots (PQDs) and OSCs, fabrication of solution‐processed PQD/OSC PHJs are reported. The phototransistors based on bilayer PQD/PDVT‐10 PHJs show responsivity up to 1.64 × 10 4 A W −1 , specific detectivity of 3.17 × 10 12 Jones, and photosensitivity of 5.33 × 10 6 when illuminated by 450 nm light. Such high photodetection performance is attributed to efficient charge dissociation and transport, as well as the photogating effect in the PHJs. Furthermore, the tri‐layer PDVT‐10/PQD/Y6 PHJs are used to construct photodiodes working in self‐powered mode, which exhibit broad range photoresponse from ultraviolet to near‐infrared, with responsivity approaching 10 −1 A W −1 and detectivity over 10 6 Jones. These results present a convenient and scalable production processes for solution‐processed PHJs and show their great potential for optoelectronic applications.},
doi = {10.1002/advs.202105856},
journal = {Advanced Science},
number = 12,
volume = 9,
place = {Germany},
year = {Tue Mar 01 00:00:00 EST 2022},
month = {Tue Mar 01 00:00:00 EST 2022}
}
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