Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100)
Abstract
Here, the control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO3 (LTO) grown epitaxially on SrTiO3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO2-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La1-xSrxTiO3. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.
- Authors:
-
- North Carolina State Univ., Raleigh, NC (United States)
- Univ. of Texas-Arlington, TX (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1846807
- Alternate Identifier(s):
- OSTI ID: 1833765
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Vacuum Science and Technology A
- Additional Journal Information:
- Journal Volume: 40; Journal Issue: 1; Journal ID: ISSN 0734-2101
- Publisher:
- American Vacuum Society / AIP
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Heterointerfaces; Insulators; Bragg peak; Heterostructures; Electric measurements; Crystal lattices; Epitaxy; X-ray crystal truncation rod scattering; Perovskites; Synchrotrons
Citation Formats
Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., and Kumah, Divine P. Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100). United States: N. p., 2021.
Web. doi:10.1116/6.0001464.
Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., & Kumah, Divine P. Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100). United States. https://doi.org/10.1116/6.0001464
Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., and Kumah, Divine P. Thu .
"Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100)". United States. https://doi.org/10.1116/6.0001464. https://www.osti.gov/servlets/purl/1846807.
@article{osti_1846807,
title = {Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100)},
author = {Chen, Tongjie and Ahmadi-Majlan, Kamyar and Lim, Zheng Hui and Zhang, Zhan and Ngai, Joseph H. and Kumah, Divine P.},
abstractNote = {Here, the control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO3 (LTO) grown epitaxially on SrTiO3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO2-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La1-xSrxTiO3. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.},
doi = {10.1116/6.0001464},
journal = {Journal of Vacuum Science and Technology A},
number = 1,
volume = 40,
place = {United States},
year = {Thu Dec 02 00:00:00 EST 2021},
month = {Thu Dec 02 00:00:00 EST 2021}
}
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