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Title: Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100)

Abstract

Here, the control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO3 (LTO) grown epitaxially on SrTiO3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO2-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La1-xSrxTiO3. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.

Authors:
 [1];  [2];  [2];  [3];  [2]; ORCiD logo [1]
  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Univ. of Texas-Arlington, TX (United States)
  3. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1846807
Alternate Identifier(s):
OSTI ID: 1833765
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology A
Additional Journal Information:
Journal Volume: 40; Journal Issue: 1; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society / AIP
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Heterointerfaces; Insulators; Bragg peak; Heterostructures; Electric measurements; Crystal lattices; Epitaxy; X-ray crystal truncation rod scattering; Perovskites; Synchrotrons

Citation Formats

Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., and Kumah, Divine P. Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100). United States: N. p., 2021. Web. doi:10.1116/6.0001464.
Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., & Kumah, Divine P. Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100). United States. https://doi.org/10.1116/6.0001464
Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., and Kumah, Divine P. Thu . "Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100)". United States. https://doi.org/10.1116/6.0001464. https://www.osti.gov/servlets/purl/1846807.
@article{osti_1846807,
title = {Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100)},
author = {Chen, Tongjie and Ahmadi-Majlan, Kamyar and Lim, Zheng Hui and Zhang, Zhan and Ngai, Joseph H. and Kumah, Divine P.},
abstractNote = {Here, the control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO3 (LTO) grown epitaxially on SrTiO3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO2-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La1-xSrxTiO3. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.},
doi = {10.1116/6.0001464},
journal = {Journal of Vacuum Science and Technology A},
number = 1,
volume = 40,
place = {United States},
year = {Thu Dec 02 00:00:00 EST 2021},
month = {Thu Dec 02 00:00:00 EST 2021}
}

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