DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Journal Article · · IEEE Journal of the Electron Devices Society

Not Available

Sponsoring Organization:
USDOE
Grant/Contract Number:
AR0001028
OSTI ID:
1845907
Journal Information:
IEEE Journal of the Electron Devices Society, Journal Name: IEEE Journal of the Electron Devices Society Vol. 10; ISSN 2168-6734
Publisher:
Institute of Electrical and Electronics EngineersCopyright Statement
Country of Publication:
United States
Language:
English

References (28)

Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's journal September 1987
Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps journal February 2005
Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications journal May 2019
A silicon carbide CMOS intelligent gate driver circuit with stable operation over a wide temperature range journal January 1999
A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics conference March 2015
A modification on "An improved method to determine MOSFET channel length" journal March 1985
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs conference March 2021
A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C journal January 2020
Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs journal January 2021
High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters journal September 2016
DC Modeling and Geometry Scaling of SiC Low-Voltage MOSFETs for Integrated Circuit Design journal September 2019
A Novel 700-V SOI LDMOS With Double-Sided Trench journal May 2007
Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET journal February 2011
SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology conference August 2021
High-Temperature Voltage and Current References in Silicon Carbide CMOS journal June 2016
555-Timer and Comparators Operational at 500 °C journal September 2019
An Integrated SiC CMOS Gate Driver for Power Module Integration journal November 2019
A SiC CMOS Linear Voltage Regulator for High-Temperature Applications journal January 2020
A high temperature comparator in CMOS SiC conference November 2015
A SiC 8 Bit DAC at 400°C conference November 2015
Characterization of a Silicon Carbide BCD Process for 300°C Circuits conference October 2019
Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications conference November 2021
Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology conference May 2021
Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications journal May 2019
Technical trend of power electronics systems for automotive applications journal April 2020
High Temperature Silicon Carbide CMOS Integrated Circuits journal March 2011
Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages journal July 2019
Material science and device physics in SiC technology for high-voltage power devices journal March 2015

Similar Records

Related Subjects