Artificial spin ice phase-change memory resistors

Caravelli, Francesco; Chern, Gia-Wei; Nisoli, Cristiano

doi:10.1088/1367-2630/ac4c0a

Title: Artificial spin ice phase-change memory resistors

Journal Article · 15 February 2022 · New Journal of Physics

DOI: https://doi.org/10.1088/1367-2630/ac4c0a · OSTI ID:1845576

; Chern, Gia-Wei; Nisoli, Cristiano

Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I – V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1845576

Report Number(s):: LA-UR-19-27438

Journal Information:: New Journal of Physics, Journal Name: New Journal of Physics Journal Issue: 2 Vol. 24; ISSN 1367-2630

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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