Effective Mass from Seebeck Coefficient

Snyder, Gerald Jeffrey; Pereyra, Alessandro; Gurunathan, Ramya

doi:10.1002/adfm.202112772

Title: Effective Mass from Seebeck Coefficient

Journal Article · 08 February 2022 · Advanced Functional Materials

DOI: https://doi.org/10.1002/adfm.202112772 · OSTI ID:1845179

Snyder, Gerald Jeffrey ^[1]; Pereyra, Alessandro ^[1];

^[1]

Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA

Abstract Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced here is the Seebeck effective mass, n _H is the charge carrier concentration measured by the Hall effect ( n _H = 1/ eR _H , R _H is Hall resistance) in 10 ²⁰ cm ⁻³ , T is the absolute temperature in K, S is the Seebeck coefficient, and k _B / e = 86.3 μV K ⁻¹ . This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1845179

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 20 Vol. 32; ISSN 1616-301X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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