Title: Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Abstract

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

Authors:

Peng, Shouzhong ^[1]; Zhu, Daoqian ^[2]; Li, Weixiang ^[1]; Wu, Hao ^[3]; Grutter, Alexander J.  ^[4];

• Search DOE PAGES for author "Grutter, Alexander J."
• Search DOE PAGES for ORCID "0000-0002-6876-7625"

Gilbert, Dustin A.  ^[5];

• Search DOE PAGES for author "Gilbert, Dustin A."
• Search DOE PAGES for ORCID "0000-0003-3747-3883"

Lu, Jiaqi ^[2]; Xiong, Danrong ^[2]; Cai, Wenlong ^[2]; Shafer, Padraic  ^[6];

• Search DOE PAGES for author "Shafer, Padraic"
• Search DOE PAGES for ORCID "0000-0001-9363-2557"

Wang, Kang L.  ^[3];

• Search DOE PAGES for author "Wang, Kang L."
• Search DOE PAGES for ORCID "0000-0002-9363-1279"

Zhao, Weisheng  ^[1]

• Search DOE PAGES for author "Zhao, Weisheng"
• Search DOE PAGES for ORCID "0000-0001-8088-0404"

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+ Show Author Affiliations

1. Beihang Univ., Beijing (China); Beihang Univ., Hefei (China)
2. Beihang Univ., Beijing (China)
3. Univ. of California, Los Angeles, CA (United States)
4. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
5. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); Univ. of Tennessee, Knoxville, TN (United States)
6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:

Mon Nov 30 00:00:00 EST 2020

Research Org.:

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); National Key Technology Program of China; Beihang Hefei Innovation Research Institute

OSTI Identifier:

1844925

Grant/Contract Number:  

AC02-05CH11231; 61627813; 61571023; 2017ZX01032101; BHKX-19-02

Resource Type:

Accepted Manuscript

Journal Name:

Nature Electronics

Additional Journal Information:

Journal Volume: 3; Journal Issue: 12; Journal ID: ISSN 2520-1131

Publisher:

Springer Nature

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING; electrical engineering; electronic engineering; electronic devices; spintronic devices; spintronics