Novel channel edge doping for hump reduction in LTPS TFTs

Kim, Ki Woo; Lee, Heesoo; Kim, Hyun Jae

doi:10.1080/15980316.2022.2029590

Title: Novel channel edge doping for hump reduction in LTPS TFTs

Journal Article · 06 February 2022 · Journal of Information Display

DOI: https://doi.org/10.1080/15980316.2022.2029590 · OSTI ID:1843880

^[1]; Lee, Heesoo ^[1];

^[1]

School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea

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Sponsoring Organization:: USDOE EM Office of Technology Innovation and Development (EM-30)

OSTI ID:: 1843880

Journal Information:: Journal of Information Display, Journal Name: Journal of Information Display Journal Issue: 2 Vol. 23; ISSN 1598-0316

Publisher:: Informa UK LimitedCopyright Statement

Country of Publication:: Country unknown/Code not available

Language:: English

References (13)

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep35044	journal	October 2016
“Hump” characteristics and edge effects in polysilicon thin film transistors Valletta, A.; Gaucci, P.; Mariucci, L. Journal of Applied Physics, Vol. 104, Issue 12 https://doi.org/10.1063/1.3050323	journal	December 2008
The electrical properties of polycrystalline silicon films Seto, John Y. W. Journal of Applied Physics, Vol. 46, Issue 12 https://doi.org/10.1063/1.321593	journal	December 1975
Hysteresis characteristics in low temperature poly‐Si thin film transistors Chung, Hoon‐Ju; Kim, Dae‐Hwan; Kim, Byeong‐Koo Journal of Information Display, Vol. 6, Issue 4 https://doi.org/10.1080/15980316.2005.9651984	journal	January 2005
Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays Na, Se Hwan; Min, Won Kyung; Kim, Do Hyung Journal of Information Display, Vol. 22, Issue 4 https://doi.org/10.1080/15980316.2021.1923581	journal	May 2021
Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies Sallagoity, P.; Ada-Hanifi, M.; Paoli, M. IEEE Transactions on Electron Devices, Vol. 43, Issue 11 https://doi.org/10.1109/16.543025	journal	January 1996
Polysilicon TFT technology for active matrix OLED displays Stewart, M.; Howell, R. S.; Pires, L. IEEE Transactions on Electron Devices, Vol. 48, Issue 5 https://doi.org/10.1109/16.918227	journal	May 2001
Driving Schemes for a-Si and LTPS AMOLED Displays Nathan, A.; Chaji, G. R.; Ashtiani, S. J. Journal of Display Technology, Vol. 1, Issue 2 https://doi.org/10.1109/JDT.2005.858913	journal	December 2005
A New Voltage Driving Scheme to Suppress Non-Idealities of Polycrystalline Thin-Film Transistors for AMOLED Displays Liu, Wenjiang; Yao, Guangyu; Jiang, Chen Journal of Display Technology, Vol. 10, Issue 12 https://doi.org/10.1109/JDT.2014.2331986	journal	December 2014
LTPS TFT Process on Polyimide Substrate for Flexible AMOLED Gao, Xiaoyu; Lin, Li; Liu, Yucheng Journal of Display Technology, Vol. 11, Issue 8 https://doi.org/10.1109/JDT.2015.2419656	journal	August 2015
Analysis of Recoverable Residual Image Characteristics of Flexible Organic Light-Emitting Diode Displays Using Polyimide Substrates Hwang, Han Wook; Hong, Seonghwan; Hwang, Sang Soo IEEE Electron Device Letters, Vol. 40, Issue 7 https://doi.org/10.1109/LED.2019.2914142	journal	July 2019
Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors Liao, Chia-Chun; Lin, Min-Chen; Chiang, Tsung-Yu IEEE Transactions on Electron Devices, Vol. 58, Issue 11 https://doi.org/10.1109/TED.2011.2165214	journal	November 2011
Analysis of the Hump Characteristics in Poly-Si Thin Film Transistor Kim, Soopool; Oh, Jae Young; Yang, Joon Young ECS Transactions, Vol. 3, Issue 8 https://doi.org/10.1149/1.2356335	journal	October 2006

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