Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides

Kong, Xiangru; Luo, Wei; Li, Linyang; Yoon, Mina; Berlijn, Tom; Liang, Liangbo

doi:10.1088/2053-1583/ac4957

Title: Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides

Journal Article · 31 January 2022 · 2D Materials

DOI: https://doi.org/10.1088/2053-1583/ac4957 · OSTI ID:1843708

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Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Hebei Univ. of Technology, Tianjin (China)

Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T' phase of transition metal dichalcogenides (MX₂, M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Furthermore, our first principles calculations demonstrate that light can induce important transitions in the topological phases of this emerging materials family. For example, upon irradiation, Te-based MX2 undergoes a phase transition from quantum spin Hall (QSH) semimetal to time-reversal symmetry broken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the other hand, Se- and S-based MX₂ undergoes the topological phase transition from the QSH effect to the quantum anomalous Hall effect and into trivial phases with increasing light intensity. From a general perspective, this theoretical work brings further insight into non-equilibrium topological systems.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1843708

Journal Information:: 2D Materials, Journal Name: 2D Materials Journal Issue: 2 Vol. 9; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
Floquet engineering
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Title: Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides

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