Orientated Growth of Ultrathin Tellurium by van der Waals Epitaxy
[1];
[5]
- Electrical Engineering and Computer Sciences University of California at Berkeley Berkeley CA 94720 USA, Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Department of Materials Science and Engineering University of California at Berkeley Berkeley CA 94720 USA
- Department of Materials Science and Engineering University of California at Berkeley Berkeley CA 94720 USA
- Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Department of Materials Science and Engineering University of California at Berkeley Berkeley CA 94720 USA, The Molecular Foundry Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
- Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Department of Materials Science and Engineering University of California at Berkeley Berkeley CA 94720 USA
- Electrical Engineering and Computer Sciences University of California at Berkeley Berkeley CA 94720 USA, Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Abstract Tellurium, as an elemental van der Waals semiconductor, has intriguing anisotropic physical properties owing to its inherent 1D crystal structure. To exploit the anisotropic and thickness‐dependent behavior, it is important to realize orientated growth of ultrathin tellurium. Here, van der Waals epitaxial growth of Te on the surface of 2D transition metal dichalcogenides is systematically investigated. Orientated growth of Te with a thickness down to 5 nm is realized on three‐fold symmetric substrates (WSe 2 , WS 2 , MoSe 2 , and MoS 2 ), where the atomic chains of Te are aligned with the armchair directions of substrates. 1D/2D moiré superlattices are observed for the Te/WSe 2 heterostructure. This method is extended to the growth of SeTe alloys, providing flexibility for band engineering. Finally, growth of textured Te film is demonstrated on the lower‐symmetry surface of WTe 2 .
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1842860
- Journal Information:
- Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 5 Vol. 9; ISSN 2196-7350
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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