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Title: Nano-porous GaN cladding and scattering loss in edge emitting laser diodes

Journal Article · · Optics Express
DOI: https://doi.org/10.1364/OE.445512 · OSTI ID:1842535
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We report continuous wave operation of electrically injected InGaN laser diodes using nano-porous GaN n-side cladding with 33% porosity. At 454 nm emission wavelength, the pulsed injection slope efficiency is 0.24 W/A with a high loss of 82 cm -1 . The considerable 60 cm -1 of excess loss of the nano-porous clad lasers is attributed to scattering at pores in unintentionally 3% porosified layers, supported by numerical modeling. Simulations comparing porous GaN cladding to AlInN cladding for lasers operating at 589 nm indicate that the porous cladding provides similar internal loss and lower thermal impedance.

Research Organization:
University of California, Santa Barbara, CA (United States)
Sponsoring Organization:
Defense Advanced Research Projects Agency (DARPA); National Science Foundation; Nexus Photonics, LLC; USDOE; USDOE Advanced Research Projects Agency - Energy (ARPA-E); University of California Santa Barbara
Grant/Contract Number:
AR0000671
OSTI ID:
1842535
Journal Information:
Optics Express, Journal Name: Optics Express Journal Issue: 2 Vol. 30; ISSN 1094-4087; ISSN OPEXFF
Publisher:
Optical Society of AmericaCopyright Statement
Country of Publication:
United States
Language:
English

References (20)

Watt-Class Green (530 nm) and Blue (465 nm) Laser Diodes journal December 2017
Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials journal September 2005
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays journal February 2013
Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example journal June 2015
Optical Engineering of Modal Gain in a III-Nitride Laser with Nanoporous GaN journal July 2016
Optical study of microvoids, voids, and local inhomogeneities in amorphous silicon journal October 1991
Activation energies of Si donors in GaN journal May 1996
High Si and Ge n-type doping of GaN doping - Limits and impact on stress journal March 2012
Compact high-flux source of cold sodium atoms journal June 2013
Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact journal March 2018
Thermal transport of nanoporous gallium nitride for photonic applications journal April 2019
Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector journal July 2020
Optical simulations of blue and green semipolar InGaN/GaN lasers conference March 2018
High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm journal July 2012
Atmospheric-turbulence compensation by resonant optical backscattering from the sodium layer in the upper atmosphere journal January 1994
Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN journal January 2019
InGaN/GaN microdisks enabled by nanoporous GaN cladding journal January 2018
Influence of Various Bottom DBR Designs on the Thermal Properties of Blue Semiconductor-Metal Subwavelength-Grating VCSELs journal October 2019
Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region journal January 2019
Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors journal February 2019

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