Method to create cuprate tunnel junctions with atomically sharp interfaces

Journal Article · 29 December 2021 · Journal of Vacuum Science and Technology B

DOI: https://doi.org/10.1116/6.0001487 · OSTI ID:1838307

Bollinger, Anthony T.  ^[1]; He, Xi ^[2]; Xu, Xiaotao ^[3]; Shi, Xiaoyan ^[4]; Božović, Ivan ^[2]

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1. Brookhaven National Lab. (BNL), Upton, NY (United States)
2. Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States). Energy Sciences Inst.; Yale Univ., New Haven, CT (United States)
3. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Texas at Dallas, Richardson, TX (United States)
4. Univ. of Texas at Dallas, Richardson, TX (United States)

In this work, we present a method for producing tunnel junctions from cuprate thin films grown by atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Our approach utilizes microfabrication processing and relies on the atomically precise interfaces provided by the ALL-MBE synthesis technique. The method is suitable for a wide range of junction dimensions and materials and allows for more complex designs such as superconducting quantum interference devices and junction arrays. Fully superconducting electrodes ensure that the contact resistances in the devices created by this method remain very low.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: Gordon and Betty Moore Foundation; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
• Grant/Contract Number: SC0012704
• OSTI ID: 1838307
• Report Number(s): BNL-222568-2021-JAAM
• Journal Information: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 1 Vol. 40; ISSN 2166-2746
• Publisher: American Vacuum Society / AIPCopyright Statement
• Country of Publication: United States
• Language: English