Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Zhang, Xiaoqian; Ambhire, Siddhesh C.; Lu, Qiangsheng; Niu, Wei; Cook, Jacob; Jiang, Jidong Samuel; Hong, Deshun; Alahmed, Laith; He, Liang; Zhang, Rong; Xu, Yongbing; Zhang, Steven S.-L.; Li, Peng; Bian, Guang

doi:10.1021/acsnano.1c05519

Title: Giant Topological Hall Effect in van der Waals Heterostructures of CrTe₂/Bi₂Te₃

Journal Article · 29 August 2021 · ACS Nano

DOI: https://doi.org/10.1021/acsnano.1c05519 · OSTI ID:1837074

Zhang, Xiaoqian ^[1]; Ambhire, Siddhesh C. ^[2]; Lu, Qiangsheng ^[3]; Niu, Wei ^[4]; Cook, Jacob ^[3]; Jiang, Jidong Samuel ^[5]; Hong, Deshun ^[5]; Alahmed, Laith ^[6];

^[7]; Zhang, Rong ^[7]; Xu, Yongbing ^[8]; Zhang, Steven S.-L. ^[2];

^[6];

^[3]

Nanjing Univ. (China); Univ. of Missouri, Columbia, MO (United States); Univ. of Science and Technology, Guangdong (China)
Case Western Reserve Univ., Cleveland, OH (United States)
Univ. of Missouri, Columbia, MO (United States)
Nanjing Univ. of Posts and Telecommunications, Nanjing (China)
Argonne National Lab. (ANL), Lemont, IL (United States)
Auburn Univ., AL (United States)
Nanjing Univ. (China)
Nanjing Univ. (China); Univ. of York (United Kingdom)

Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 mu Omega.cm in the van der Waals heterostructures of CrTe₂/Bi₂Te₃ fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe₂, strong SOC in Bi₂Te₃, and an atomically sharp interface. Furthermore, our work reveals CrTe₂/Bi₂Te₃ as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1837074

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 10 Vol. 15; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Giant Topological Hall Effect in van der Waals Heterostructures of CrTe₂/Bi₂Te₃