DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Controlled spalling of (100)-oriented GaAs with a nanoimprint lithography interlayer for thin-film layer transfer without facet formation

Journal Article · · Thin Solid Films

Not Available

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1836625
Journal Information:
Thin Solid Films, Journal Name: Thin Solid Films Journal Issue: C Vol. 742; ISSN 0040-6090
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

References (33)

19%-efficient and 43 µm-thick crystalline Si solar cell from layer transfer using porous silicon: 19% efficient and 43 µm-thick crystalline Si solar cell journal July 2011
Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells journal May 2016
Wafer reuse for repeated growth of III-V solar cells journal May 2010
Surface structure of GaAs(211) journal October 1984
Rapid IR lamp alloying of nickel-based ohmic contacts on n-GaAs journal December 1988
Lateral overgrowth and epitaxial lift-off of InP by halide vapor-phase epitaxy journal May 1998
Measurement and simulation of interfacial adhesion strength between SiO2 thin film and III–V material journal September 2011
Controlled spalling-based mechanical substrate exfoliation for III-V solar cells: A review journal June 2021
Photon confinement in high-efficiency, thin-film III–V solar cells obtained by epitaxial lift-off journal July 2006
Description of brittle failure of non-uniform MEMS geometries journal February 2007
Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating journal March 2018
Development of High-Efficiency GaAs Solar Cells Grown on Nanopatterned GaAs Substrates journal September 2021
Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap journal July 2020
Remote epitaxy through graphene enables two-dimensional material-based layer transfer journal April 2017
Epitaxial layer transfer by bond and etch back of porous Si journal April 1994
Morphological Changes of a Surface of Revolution due to Capillarity‐Induced Surface Diffusion journal June 1965
High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology journal January 2012
The importance of high-index surfaces for the morphology of GaAs quantum dots journal April 1999
Mesoporous germanium morphology transformation for lift-off process and substrate re-use journal January 2013
Controlled exfoliation of (100) GaAs-based devices by spalling fracture journal January 2016
Perspective: Fundamentals of coalescence-related dislocations, applied to selective-area growth and other epitaxial films journal December 2018
A technique for producing epitaxial films on reuseable substrates journal September 1980
Extreme selectivity in the lift‐off of epitaxial GaAs films journal December 1987
Layer transfer by controlled spalling journal March 2013
Fracture Toughness, Fracture Strength, and Stress Corrosion Cracking of Silicon Dioxide Thin Films journal August 2008
Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies journal April 2012
GaAs Solar Cells on Nanopatterned Si Substrates journal November 2018
Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells conference June 2019
(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics conference June 2021
Failure Mechanisms in Ceramic-Fiber/Ceramic-Matrix Composites journal May 1985
Influence of Reinforcement Content and Diameter on the R-Curve Response in SiC-Whisker-Reinforced Alumina journal February 1996
Fracture of GaAs Wafers journal December 1988
The History, Physics, and Applications of the Smart-Cut® Process journal December 1998