Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

Journal Article · 31 December 2019 · IEEE Journal of the Electron Devices Society

DOI: https://doi.org/10.1109/JEDS.2020.3014133 · OSTI ID:1836319

Yang, Tsung-Han ; Fu, Houqiang ; Fu, Kai ; Yang, Chen ; Montes, Jossue; Huang, Xuanqi ; Chen, Hong; Zhou, Jingan ; Qi, Xin ; Deng, Xuguang; Zhao, Yuji

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• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• OSTI ID: 1836319
• Journal Information: IEEE Journal of the Electron Devices Society, Journal Name: IEEE Journal of the Electron Devices Society Vol. 8; ISSN 2168-6734
• Publisher: Institute of Electrical and Electronics EngineersCopyright Statement
• Country of Publication: United States
• Language: English