Optimization of source material for in-situ Arsenic doping via vapor transport deposition of CdTe films

Journal Article · 13 June 2020 · Conference Record of the IEEE Photovoltaic Specialists Conference

DOI: https://doi.org/10.1109/pvsc45281.2020.9300719 · OSTI ID:1836059

McPherson, Seth W. ^[1]; Al-Hamdi, Tawfeeq ^[2]; Duenow, Joel N. ^[3]; Zheng, X. ^[3]; Albin, David S. ^[3]; Ablekim, Tursun ^[3]; Colegrove, Eric ^[3]; Amarasinghe, Mahisha ^[3]; Metzger, Wyatt K. ^[3]; Swain, Santosh K. ^[2]; Lynn, Kelvin G. ^[2]

---

1. Washington State Univ., Pullman, WA (United States); Washington State University
2. Washington State Univ., Pullman, WA (United States)
3. National Renewable Energy Lab. (NREL), Golden, CO (United States)

In this work, in-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 10¹⁸-10²⁰ cm^-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3x10¹⁷ cm^-3–1x10¹⁸cm^-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

• Research Organization: Washington State Univ., Pullman, WA (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Grant/Contract Number: EE0007537; AC36-08GO28308
• OSTI ID: 1836059
• Alternate ID(s): OSTI ID: 1765618
• Journal Information: Conference Record of the IEEE Photovoltaic Specialists Conference, Journal Name: Conference Record of the IEEE Photovoltaic Specialists Conference Vol. 2020; ISSN 0160-8371
• Publisher: IEEECopyright Statement
• Country of Publication: United States
• Language: English