A Prony-Based Curve-Fitting Method for Characterization of RF Pulses From Optoelectronic Devices
There has been a boost in optoelectronic device tech- nology that can leverage strengths of both optical and electronic worlds to support high-voltage and high-speed operation. It is critical to characterize the RF performance from the measured signals of these devices in order to evaluate their performance, optimize their designs and also aid in better understanding of the device physics. Conventional curve-fitting models either fail to fit measured signals with high accuracy or provide limited, if any, information about the device physics. Here, we propose a Prony-based curve-fitting method to characterize RF pulse measurements from such optoelectronic devices. The performance of the overall algorithm on measurement data shows high accuracy, with the capability to extract key pulse parameters such as full width at half maximum and rise time. Additionally, the capability of the method to extract time constants associated with semiconductor traps can help in better understanding of optoelectronic device physics.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- AC52-07NA27344; 19-DR-015
- OSTI ID:
- 1835952
- Alternate ID(s):
- OSTI ID: 1835953; OSTI ID: 1860782
- Report Number(s):
- LLNL-JRNL-826272; 1040874
- Journal Information:
- IEEE Signal Processing Letters, Vol. 29, Issue N/A; ISSN 1070-9908
- Publisher:
- IEEE Signal Processing SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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