Targeting Medium-Voltage Power Electronics with Vertical GaN Devices

Journal Article · 17 October 2021 · Compound Semiconductor

OSTI ID:1834147

Kaplar, Robert ^[1]; Anderson, Travis ^[2]; Chowdhury, Srabanti ^[3]; Akta, Ozgar ^[4]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. Naval Research Lab. (NRL), Washington, DC (United States)
3. Stanford Univ., CA (United States)
4. EDYNX Inc., Livermore, CA (United States)

Vertical GaN p-n diodes combine excellent efficiencies with incredibly fast protection from unwanted electromagnetic pulses.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA); US Department of the Navy, Office of Naval Research (ONR)
• Grant/Contract Number: NA0003525
• OSTI ID: 1834147
• Report Number(s): SAND--2021-14088J; 701378
• Journal Information: Compound Semiconductor, Journal Name: Compound Semiconductor Journal Issue: VII Vol. 27; ISSN 1096-598X
• Publisher: Angel Business CommunicationsCopyright Statement
• Country of Publication: United States
• Language: English