Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS2
Abstract
Coulomb interactions in atomically thin transition metal dichalcogenides can be dynamically engineered by exploiting the dielectric environment to control the optical and electronic properties. Here we demonstrate an optically tunable giant band-gap renormalization (BGR) ~1200 and 850 meV from the edge of the conduction band and complete suppression of the exciton absorption in large-area single-layer (1L) and three-layer (3L) MoS2, respectively. The observed giant BGR is two orders of magnitude larger than that in the conventional semiconductors, and it persists for tens of ps. Strikingly, our results demonstrate photoinduced transparency at the electronic band gap using an intense optical field at room temperature. Exciton bleach recovery in 1L and 3L show a contrasting fluence-dependent response, demonstrating the layer-dependent optical tuning of exciton lifetime in a way that would be both reversible and real time. We find that the optical band gap (exciton resonance peak) shows a transient redshift followed by an anomalous blueshift from the lowest energy point as a function of the photo-generated carrier density. The observed exciton energy shift is analogous to atom-atom interactions, and it varies as a Lennard-Jones like potential as a function of the interexciton separation.
- Authors:
-
[3];
[1]
- Indian Inst. of Science Education and Research, Bhopal (India)
- Indian Inst. of Technology (IIT), Kanpur (India)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1832860
- Report Number(s):
- NREL/JA-5900-79661
Journal ID: ISSN 2469-9950; MainId:35882;UUID:21da61b0-b668-478b-8290-8d8bc429c53a;MainAdminID:63268; TRN: US2216795
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 104; Journal Issue: 20; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 2D semiconductors; solar-photochemistry
Citation Formats
Bera, Santu K., Shrivastava, Meghanns, Bramhachari, Khamari, Zhang, Hanyu, Poonia, Ajay K., Mandal, Dipendranath, Miller, Elisa M., Beard, Matthew C., Agarwal, Amit, and Adarsh, K. V. Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS2. United States: N. p., 2021.
Web. doi:10.1103/physrevb.104.l201404.
Bera, Santu K., Shrivastava, Meghanns, Bramhachari, Khamari, Zhang, Hanyu, Poonia, Ajay K., Mandal, Dipendranath, Miller, Elisa M., Beard, Matthew C., Agarwal, Amit, & Adarsh, K. V. Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS2. United States. https://doi.org/10.1103/physrevb.104.l201404
Bera, Santu K., Shrivastava, Meghanns, Bramhachari, Khamari, Zhang, Hanyu, Poonia, Ajay K., Mandal, Dipendranath, Miller, Elisa M., Beard, Matthew C., Agarwal, Amit, and Adarsh, K. V. Thu .
"Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS2". United States. https://doi.org/10.1103/physrevb.104.l201404. https://www.osti.gov/servlets/purl/1832860.
@article{osti_1832860,
title = {Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS2},
author = {Bera, Santu K. and Shrivastava, Meghanns and Bramhachari, Khamari and Zhang, Hanyu and Poonia, Ajay K. and Mandal, Dipendranath and Miller, Elisa M. and Beard, Matthew C. and Agarwal, Amit and Adarsh, K. V.},
abstractNote = {Coulomb interactions in atomically thin transition metal dichalcogenides can be dynamically engineered by exploiting the dielectric environment to control the optical and electronic properties. Here we demonstrate an optically tunable giant band-gap renormalization (BGR) ~1200 and 850 meV from the edge of the conduction band and complete suppression of the exciton absorption in large-area single-layer (1L) and three-layer (3L) MoS2, respectively. The observed giant BGR is two orders of magnitude larger than that in the conventional semiconductors, and it persists for tens of ps. Strikingly, our results demonstrate photoinduced transparency at the electronic band gap using an intense optical field at room temperature. Exciton bleach recovery in 1L and 3L show a contrasting fluence-dependent response, demonstrating the layer-dependent optical tuning of exciton lifetime in a way that would be both reversible and real time. We find that the optical band gap (exciton resonance peak) shows a transient redshift followed by an anomalous blueshift from the lowest energy point as a function of the photo-generated carrier density. The observed exciton energy shift is analogous to atom-atom interactions, and it varies as a Lennard-Jones like potential as a function of the interexciton separation.},
doi = {10.1103/physrevb.104.l201404},
journal = {Physical Review B},
number = 20,
volume = 104,
place = {United States},
year = {2021},
month = {11}
}
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