Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Journal Article · 01 January 2020 · IEEE Journal of the Electron Devices Society

DOI: https://doi.org/10.1109/JEDS.2020.2963902 · OSTI ID:1831302

Fu, Kai ; Fu, Houqiang ; Huang, Xuanqi ; Yang, Tsung-Han; Cheng, Chi-Yin; Peri, Prudhvi Ram; Chen, Hong; Montes, Jossue; Yang, Chen ; Zhou, Jingan ; Deng, Xuguang; Qi, Xin ; Smith, David J.; Goodnick, Stephen M. ; Zhao, Yuji

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• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• Grant/Contract Number: AR0000868
• OSTI ID: 1831302
• Journal Information: IEEE Journal of the Electron Devices Society, Journal Name: IEEE Journal of the Electron Devices Society Vol. 8; ISSN 2168-6734
• Publisher: Institute of Electrical and Electronics EngineersCopyright Statement
• Country of Publication: United States
• Language: English